Cleaning composition

Patent metadata

Field	Value
Publication number	US-10696932-B2
Application number	US-201615745203-A
Country	US
Kind code	B2
Filing date	Jul 28, 2016
Priority date	Aug 3, 2015
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent; (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

First claim

What is claimed is:

1. A composition, comprising:
(a) 0.5-25 percent by weight an alkaline compound;
(b) 1-25 percent by weight an alcohol amine compound;
(c) 0.1-20 percent by weight a hydroxylammonium compound;
(d) 5-95 percent by weight an organic solvent;
(e) 0.1-5 percent by weight a corrosion inhibitor compound; and
(f) 2-25 percent by weight water;
wherein the composition has a pH of at least about 12.4.

2. The composition of claim 1 , wherein the alkaline compound is selected from the group consisting of tetramethyl ammonium hydroxide (TMAH), 2-hydroxyltrimethyl ammonium hydroxide, tetraethyl ammonium hydroxide (TEAH), tetrapropyl ammonium hydroxide (TPAH), tetrabutyl ammonium hydroxide (TBAH), and a mixture thereof.

3. The composition of claim 1 , wherein the alcohol amine compound is selected from the group consisting of monoethanolamine (MEA), diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, monoisopropanolamine, diisopropanolamine, triisopropanolamine, N-methyldiethanolamine, N-ethyl ethanolamine, N-butyl ethanolamine, diethanolamine, diglycolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methyl-N-ethyl ethanolamine and a mixture of thereof.

4. The composition of claim 1 , wherein the hydroxylammonium compound is selected from the group consisting of hydroxylammonium sulfate, hydroxylammonium hydrochloride, hydroxylammonium nitrate, and hydroxylammonium phosphate.

5. The composition of claim 4 , wherein the hydroxylammonium compound is hydroxylammonium sulfate.

6. The composition of claim 1 , wherein the solvent is selected from the group consisting of N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone (NEP), gamma-butyrolactone, methyl ethyl ketone (MEK), dimethyl sulfoxide (DMSO), dimethyl sulfone, dimethylformamide, N-methylformamide, formamide, tetrametyl urea, tetrahydrofurfuryl alcohol (THFA) and a mixture thereof.

7. The composition of claim 6 , wherein the solvent is dimethyl sulfoxide (DMSO) or tetrahydrofurfuryl alcohol (THFA).

8. The composition of claim 1 , wherein the corrosion inhibitor compound is triazole, benzotriazole, substituted triazole, or substituted benzotriazole.

9. The composition of claim 8 , wherein the corrosion inhibitor compound is 5-methyl-1H-benzotriazole.

10. The composition of claim 9 , wherein the amount of the corrosion inhibitor compound is at most about 0.5 weight % of the total composition.

11. The composition of claim 9 , wherein the amount of the corrosion inhibitor compound is at most about 0.3 weight % of the total composition.

12. The composition of claim 1 , wherein the corrosion inhibitor compound is a compound of Structure (I)

wherein
R 1 is selected from the group consisting of hydrogen, substituted or unsubstituted C 1 -C 12 linear or branched alkyl, substituted or unsubstituted C 5 -C 10 cycloalkyl or heterocycloalkyl, and substituted or unsubstituted C 6 -C 12 aryl or heteroaryl; and
R 2 to R 5 are each independently selected from the group consisting of hydrogen, halogen, substituted or unsubstituted C 1 -C 12 linear or branched alkyl, substituted or unsubstituted C 5 -C 10 cycloalkyl or heterocycloalkyl, and substituted or unsubstituted C 6 -C 12 aryl or heteroaryl; or any two adjacent R 2 to R 5 , together with the ring carbon atoms to which they are attached, form a six-membered ring.

13. The composition of claim 12 , wherein the corrosion inhibitor compound is

14. A method for manufacturing a semiconductor device, comprising treating an unexposed photosensitive polymeric film, an exposed, crosslinked polymeric film, or a non-photosensitive polymeric film on a semiconductor substrate with a composition at a temperature of about 65° C. to about 85° C.;
wherein the composition comprises (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

15. A method for manufacturing a semiconductor device, comprising the steps of:
(i) patterning a photosensitive polymeric film comprising at least one polyimide polymer or a polyimide precursor polymer on top of a semiconductor substrate to form a patterned film;
(ii) treating the patterned film with ion implantation, plasma or wet etching, or metal deposition, and
(iii) stripping said photosensitive polymeric film using a composition comprising (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

16. A method for manufacturing a semiconductor device, comprising the steps of (i) exposing a polymeric film to a laser under ablating conditions, and (ii) cleaning the laser ablation debris using a composition comprising (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

17. A process, comprising:
(i) providing a semiconductor substrate containing a polymeric film;
(ii) optionally flood exposing said polymeric film by using light, or another other radiation source;
(iii) optionally subjecting said polymeric film after the light-exposure treatment to a post-exposure baking treatment;
(iv) optionally subjecting post exposure baked polymeric film to hard bake;
(v) opening vias into said polymeric film by a laser ablation process using a laser to form a patterned polymeric film;
(vi) removing post laser ablation debris from said patterned polymeric film by using a composition;
(vii) forming a conductive post in a region including an inner side of vias by applying a molten conductive paste on vias;
(viii) optionally rinsing the patterned polymeric film with a conductive paste remover solution to remove the conductive paste from top of polymeric film,
(ix) removing non-ablated areas of the patterned polymeric film using a composition at elevated temperature; and
(x) optionally, rinsing the patterned polymeric film with water or an aqueous solution to remove residues,
wherein each of the compositions used in steps (vi) and (ix) is a composition comprising (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

18. The process of claim 17 , wherein the substrate is copper and the polymeric film is obtained from a composition comprising: (a) at least one soluble polyimide polymer with end-capped groups having at least one functional group selected from a substituted or unsubstituted linear alkenyl group and a substituted or unsubstituted linear alkynyl group; (b) at least one r

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Sakamuri Raj
• Dimov Ognian N
• Naiini Ahmad A
• Malik Sanjay
• De Binod B
• Reinerth William A

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• G03F7/2053

  using a laser (ablative removal B41C) · CPC title

• G03F7/426

  containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides · CPC title