Sulfonium compound, resist composition, and pattern forming process
US-10173975-B2 · Jan 8, 2019 · US
US10691018B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10691018-B2 |
| Application number | US-201715702839-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 13, 2017 |
| Priority date | Dec 8, 2016 |
| Publication date | Jun 23, 2020 |
| Grant date | Jun 23, 2020 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.
Opening claim text (preview).
What is claimed is: 1. A photoresist composition, comprising: a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain; and a photoacid generator, wherein the photosensitive polymer includes a structure represented by the following Chemical Formula 2 or the following Chemical Formula 3, where n is an integral number ranging from 1 to 1,000,000, R 3 is one of —H and CH 3 , and R is represented by the following Chemical Formula 4, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 2. The photoresist composition as claimed in claim 1 , wherein; the photoacid generator generates acid ions (H + ) when the photoacid generator is exposed to light, and the first functional group is converted into a second functional group by a de-protection reaction using the acid ions (H + ) as a catalyst, the second functional group having a structure represented by the following Chemical Formula 8, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 3. A photoresist composition, comprising: a photosensitive polymer including a polymer chain and a first functional group coupled to the polymer chain, and a photoacid generator, wherein: the photoacid generator generates acid ions (H + ) when the photoacid generator is exposed to light, and the first functional group is convertible into a second functional group by a de-protection reaction using the acid ions (H + ) as a catalyst, wherein the second functional group has a structure represented by the following Chemical Formula 8, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20, and wherein the polymer is hydrophilic when it contains the first functional group and hydrophobic when the first functional group is converted into the second functional group, and wherein the photosensitive polymer includes a structure represented by the following Chemical Formula 2 or the following Chemical Formula 3, where n is an integral number ranging from 1 to 1,000,000, R 3 is one of —H and CH 3 , and R is represented by the following Chemical Formula 4, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 4. The photoresist composition as claimed in claim 3 , wherein the first functional group has a structure represented by the following Chemical Formula 1, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is an alkyl group having a carbon number of 1 to 20 or an aryl group having a carbon number of 1 to 20.
Photolithographic processes · CPC title
with acrylic or methacrylic acids · CPC title
Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.