Photoresist composition and a method for forming a fine pattern using the same

US10691018B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10691018-B2
Application numberUS-201715702839-A
CountryUS
Kind codeB2
Filing dateSep 13, 2017
Priority dateDec 8, 2016
Publication dateJun 23, 2020
Grant dateJun 23, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.

First claim

Opening claim text (preview).

What is claimed is: 1. A photoresist composition, comprising: a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain; and a photoacid generator, wherein the photosensitive polymer includes a structure represented by the following Chemical Formula 2 or the following Chemical Formula 3, where n is an integral number ranging from 1 to 1,000,000, R 3 is one of —H and CH 3 , and R is represented by the following Chemical Formula 4, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 2. The photoresist composition as claimed in claim 1 , wherein; the photoacid generator generates acid ions (H + ) when the photoacid generator is exposed to light, and the first functional group is converted into a second functional group by a de-protection reaction using the acid ions (H + ) as a catalyst, the second functional group having a structure represented by the following Chemical Formula 8, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 3. A photoresist composition, comprising: a photosensitive polymer including a polymer chain and a first functional group coupled to the polymer chain, and a photoacid generator, wherein: the photoacid generator generates acid ions (H + ) when the photoacid generator is exposed to light, and the first functional group is convertible into a second functional group by a de-protection reaction using the acid ions (H + ) as a catalyst, wherein the second functional group has a structure represented by the following Chemical Formula 8, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20, and wherein the polymer is hydrophilic when it contains the first functional group and hydrophobic when the first functional group is converted into the second functional group, and wherein the photosensitive polymer includes a structure represented by the following Chemical Formula 2 or the following Chemical Formula 3, where n is an integral number ranging from 1 to 1,000,000, R 3 is one of —H and CH 3 , and R is represented by the following Chemical Formula 4, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20. 4. The photoresist composition as claimed in claim 3 , wherein the first functional group has a structure represented by the following Chemical Formula 1, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R 2 is an alkyl group having a carbon number of 1 to 20 or an aryl group having a carbon number of 1 to 20.

Assignees

Inventors

Classifications

  • Photolithographic processes · CPC title

  • C08F20/18Primary

    with acrylic or methacrylic acids · CPC title

  • Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • G03F7/004Primary

    Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10691018B2 cover?
A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, where R 1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having …
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification C08F20/18. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 23 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).