Positive resist composition and pattern forming process

Patent metadata

Field	Value
Publication number	US-10012902-B2
Application number	US-201715434228-A
Country	US
Kind code	B2
Filing date	Feb 16, 2017
Priority date	Feb 19, 2016
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

First claim

The invention claimed is:

1. A positive resist composition adapted to form a positive pattern via organic solvent development, comprising a base resin containing a polymer comprising recurring units having the formula (1) and recurring units having the formula (2), but not recurring units adapted to increase a polarity by deprotection reaction with the aid of acid,

wherein R 1 and R 7 are each independently hydrogen or methyl, R 2 is a single bond, phenylene, —O—R 5 — or —C(═O)—X—R 5 —, X is —O— or —NH—, R 5 is a C 1 -C 6 straight, branched or cyclic alkylene group, C 2 -C 6 straight, branched or cyclic alkenylene group, phenylene group, or a combination thereof, which may contain a carbonyl, ester, ether or hydroxyl moiety, R 3 and R 4 are each independently a C 1 -C 12 straight, branched or cyclic alkyl group, C 6 -C 12 aryl group, C 7 -C 20 aralkyl group or mercaptophenyl group, which may contain a carbonyl, ester or ether moiety, Y is a single bond, phenylene group or —C(═O)—O—, R 8 is a single bond, a C 1 -C 10 straight, branched or cyclic alkylene group which may contain an ether moiety, ester moiety, —N═ or —S—, or phenylene or naphthylene group, R 9 and R 10 are each independently hydrogen, C 1 -C 10 straight or branched alkyl group, C 2 -C 10 alkenyl group or C 6 -C 10 aryl group, R 9 and R 10 may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain an ether moiety, sulfide moiety, disulfone moiety, nitrogen atom, double bond or aromatic moiety, either one of R 9 and R 10 may bond with R 8 to form a ring, M − is a non-nucleophilic counter ion containing at least one fluorine atom, a and b are numbers meeting 0.1≤a≤0.9, 0.1≤b≤0.9, and 0.1≤a/b≤1.5, and m is 1,
wherein the polymer further comprises recurring units containing a phenolic hydroxyl group having the formula (3):

wherein Ar is a C 6 -C 14 aromatic group which may contain a nitrogen atom, R 11 is hydrogen or methyl, R 12 is a single bond or a C 1 -C 10 straight or branched alkylene group which may contain a hydroxyl, carboxyl, ester, ether moiety or lactone ring, R 13 is hydrogen, fluorine, trifluoromethyl, cyano, C 1 -C 10 straight, branched or cyclic alkyl group, C 1 -C 10 straight, branched or cyclic alkoxy group, C 6 -C 14 aryl group, C 2 -C 10 straight, branched or cyclic alkenyl group, C 2 -C 10 straight, branched or cyclic alkynyl group, C 2 -C 10 straight, branched or cyclic alkoxycarbonyl group, C 2 -C 10 straight, branched or cyclic acyl group, or C 2 -C 10 straight, branched or cyclic acyloxy group, p is an integer of 1 to 5, q is an integer of 0 to 4, Z is a single bond, —C(═O)—O— or —C(═O)—NH—.

2. The positive resist composition of claim 1 , further comprising an organic solvent.

3. The positive resist composition of claim 1 , further comprising a surfactant.

4. A pattern forming process comprising the steps of applying the positive resist composition of claim 1 onto a substrate, baking the composition to form a resist film, exposing the resist film to high-energy radiation, and developing the resist film in an organic solvent developer.

5. The pattern forming process of claim 4 wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm.

6. The pattern forming process of claim 4 wherein the developer contains at least one organic solvent selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Adachi Teppei
• Ohashi Masaki

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• C08F220/301

  and one oxygen in the alcohol moiety · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title