Chemically amplified resist composition and patterning process

Patent metadata

Field	Value
Publication number	US-9523914-B2
Application number	US-201514943248-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Nov 25, 2014
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound which is a cholanoate having an acid labile group-protected amino group has a high contrast of alkaline dissolution rate before and after exposure and high resolution and forms a pattern of satisfactory profile with minimal roughness.

First claim

The invention claimed is:

1. A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound having the general formula (1)-1 and/or (1)-2:

wherein R 1 and R 4 each are a single bond, a straight, branched or cyclic C 1 -C 20 alkylene, C 6 -C 10 arylene, C 2 -C 20 alkenylene, or C 2 -C 20 alkynylene group, R 2 and R 5 each are hydrogen or a straight, branched or cyclic C 1 -C 12 alkyl group, or R 2 may bond with R 1 to form a ring, and R 5 may bond with R 4 to form a ring, R 3 and R 6 each are an acid labile group, X 1 to X 6 each are hydrogen, hydroxyl, alkoxy, acyloxy' or carbonyl group.

2. The resist composition of claim 1 , further comprising an organic solvent, the composition being a chemically amplified positive resist composition.

3. The resist composition of claim 2 , further comprising a dissolution inhibitor.

4. The resist composition of claim 1 , further comprising an organic solvent, the composition being a chemically amplified negative resist composition.

5. The resist composition of claim 4 , further comprising a crosslinker.

6. The resist composition of claim 1 , further comprising a surfactant.

7. A process for forming a pattern comprising the steps of applying the resist composition of claim 1 onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed film with a developer.

8. The process of claim 7 wherein the high-energy radiation is ArF excimer laser radiation of wavelength 193 nm or KrF excimer laser radiation of wavelength 248 nm.

9. The process of claim 7 wherein the high-energy radiation is electron beam or extreme ultraviolet radiation of wavelength 3 to 15 nm.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Ohashi Masaki

Classifications

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• C07J41/00

  Normal steroids containing one or more nitrogen atoms not belonging to a hetero ring · CPC title

• C07J9/005

  containing a carboxylic function directly attached or attached by a chain containing only carbon atoms to the cyclopenta[a]hydrophenanthrene skeleton · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• C07D233/60

  with hydrocarbon radicals, substituted by oxygen or sulfur atoms, attached to ring nitrogen atoms · CPC title