Selective deposition of metal-organic frameworks

Patent metadata

Field	Value
Publication number	US-10685833-B2
Application number	US-201816190921-A
Country	US
Kind code	B2
Filing date	Nov 14, 2018
Priority date	Dec 21, 2017
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.

First claim

What is claimed is:

1. A method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate, the method comprising:
selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles; and
providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film, wherein the low-k dielectric film has gaps on locations where no metal-containing film was deposited.

2. The method according to claim 1 , wherein the area-selective deposition process is an atomic layer deposition process.

3. The method according to claim 1 , wherein the metal-containing film is deposited such that it comprises at least one metal ion or a cluster of metal ions selected from the group consisting of: Zn, Fe, In, Co, Cu, Mn, Li, B, Cd, Hg, Mg, Al, Zr, Hf, Ti, Ta, and Pr.

4. The method according to claim 1 , wherein depositing the metal-containing film comprises exposing the metal-containing film to an oxidizing agent thereby forming a metal-oxide.

5. The method according to claim 1 , wherein the at least one organic ligand is azole-based.

6. The method according to claim 1 , wherein the at least one organic ligand is a carboxylic acid.

7. The method according to claim 1 , wherein the one or more deposition cycles comprises 150 or fewer deposition cycles.

8. The method according to claim 1 , further comprising:
applying an etch stop layer over the low-k dielectric film and over metal contacts in between the exposed dielectric locations;
depositing a gap-filling, low-k dielectric over the etch stop layer such that the gap-filling, low-k dielectric fills the gaps in the low-k dielectric film;
covering the gap-filling, low-k dielectric with a hard mask;
pattering the hard mask, the gap-filling, low-k dielectric, and the etch stop layer such that at least one opening is created towards the metal contacts; and
applying a metallization layer resulting in at least one via in contact with at least one of the metal contacts.

9. A method of forming a semiconductor device comprising a substrate structure by forming a low-k dielectric film selectively on exposed dielectric locations in a substrate, wherein the substrate structure is configured to interconnect individual devices of the semiconductor device, and wherein the method comprises:
selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles; and
providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film, wherein the low-k dielectric film has gaps on locations where no metal-containing film was deposited.

10. The method according to claim 9 , wherein the area-selective deposition process is an atomic layer deposition process.

11. The method according to claim 9 , wherein the metal-containing film is deposited such that it comprises at least one metal ion or a cluster of metal ions selected from the group consisting of: Zn, Fe, In, Co, Cu, Mn, Li, B, Cd, Hg, Mg, Al, Zr, Hf, Ti, Ta, and Pr.

12. The method according to claim 9 , wherein depositing the metal-containing film comprises exposing the metal-containing film to an oxidizing agent thereby forming a metal-oxide.

13. The method according to claim 9 , wherein the at least one organic ligand is azole-based.

14. The method according to claim 9 , wherein the at least one organic ligand is a carboxylic acid.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Krishtab Mikhail
• Armini Silvia
• Stassen Ivo
• Ameloot Rob

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/665

  Porous materials · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title