Direct deposition of nickel silicide nanowire

Patent metadata

Field	Value
Publication number	US-9613859-B2
Application number	US-201514975231-A
Country	US
Kind code	B2
Filing date	Dec 18, 2015
Priority date	Jan 9, 2015
Publication date	Apr 4, 2017
Grant date	Apr 4, 2017

Abstract

Methods for direct deposition of a metal silicide nanowire for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes positioning a substrate in a processing region of a process chamber, the substrate having a first surface comprising a non-dielectric material; and a dielectric layer formed on the first surface. An opening is formed in the dielectric layer, the opening exposing at least a portion of the first surface, the opening having sidewalls. A metal silicide seed is deposited in the opening using a PVD process, wherein the PVD process is performed with either no bias or a bias which creates deposition on the sidewall which is less than 1% of the deposition on the first surface. A metal silicide layer is then selectively deposited on the metal silicide seed using a metal-silicon organic precursor, creating the metal silicide nanowire.

First claim

What is claimed is:

1. A method of forming a metal silicide nanowire comprising:
positioning a substrate in a processing region of a process chamber, the substrate having:
a first surface comprising a non-dielectric material; and
a dielectric layer formed on the first surface;

forming an opening in the dielectric layer, the opening exposing at least a portion of the non-dielectric material having the first surface, the opening having sidewalls;
depositing a metal silicide seed in the opening using a PVD process, wherein the PVD process is performed with either no bias or a bias which creates deposition on the sidewall which is less than 1% of the deposition on the first surface; and
selectively depositing a metal silicide layer on the metal silicide seed using a metal-silicon organic precursor.

2. The method of claim 1 , wherein the PVD process comprises a nickel and silicon PVD target, the target having a nickel to silicon ratio of about 1:1.

3. The method of claim 1 , wherein the PVD process comprises a nickel PVD target and silicon PVD target.

4. The method of claim 1 , wherein the metal-silicon organic precursor is Nickel silicon-NxCyHz, wherein x is an integer between 0 and 5, y is an integer between 1 and 5, and z is an integer between 0 and 10.

5. The method of claim 1 , wherein selectively depositing a metal silicide layer comprises:
delivering the metal-silicon organic precursor with a reactant gas to the processing region; and
forming a plasma from the metal-silicon organic precursor and the reactant gas.

6. The method of claim 1 , wherein selectively depositing a metal silicide layer comprises:
delivering the metal-silicon organic precursor to the processing region to deposit the metal silicide layer; and
delivering a plasma comprising a reactant gas to the metal silicide layer.

7. The method of claim 1 , wherein the first surface has an exposed terminal —OH or —NH group.

8. The method of claim 1 , wherein the substrate is maintained at temperature between about 25 degrees Celsius and 400 degrees Celsius.

9. The method of claim 1 , wherein the metal silicide seed and the metal silicide layer comprise a metal selected from the group consisting of Ni, Ti, Fe, Co, Cr, and Mn.

10. The method of claim 1 , further comprising annealing the metal silicide seed and the metal silicide layer, the annealing further comprises radiant energy activation.

11. A method of forming a nanowire comprising:
positioning a substrate in a processing region of a process chamber, the substrate having:
a first surface comprising W, Co, Mo, Si or combinations thereof; and
a dielectric layer formed on the first surface;

forming an opening in the dielectric layer, the opening exposing at least a portion of the W, Co, Mo, Si or combinations thereof of the first surface, the opening having sidewalls; and
selectively depositing a metal silicide layer on the first surface using a metal-silicon organic precursor, wherein the first surface has an exposed terminal —OH or —NH group.

12. The method of claim 11 , wherein the metal-silicon organic precursor is Nickel silicon-NxCyHz, wherein x is an integer between 0 and 5, y is an integer between 1 and 5, and z is an integer between 0 and 10.

13. The method of claim 11 , wherein selectively depositing a metal silicide layer comprises:
delivering the metal-silicon organic precursor with a reactant gas to the processing region; and
forming a plasma from the metal-silicon organic precursor and the reactant gas.

14. The method of claim 11 , wherein selectively depositing a metal silicide layer comprises:
delivering the metal-silicon organic precursor to the processing region to deposit the metal silicide layer; and
delivering a plasma comprising a reactant gas to the metal silicide layer.

15. The method of claim 11 , wherein the substrate is maintained at temperature between about 25 degrees Celsius and 400 degrees Celsius.

16. The method of claim 11 , wherein the metal silicide layer comprise a metal selected from the group consisting of Ni, Ti, Fe, Co, Cr, and Mn.

17. The method of claim 11 , further comprising annealing the metal silicide layer, the annealing further comprises radiant energy activation.

18. A method of forming a nanowire comprising:
positioning a substrate in a processing region of a process chamber, the substrate having:
a first surface comprising a metal, the first surface having an exposed terminal —OH or —NH group; and
a dielectric layer formed on the first surface, the dielectric layer having a terminal —CH 3 (methyl) species;

forming an opening in the dielectric layer, the opening exposing at least a portion of the metal of the first surface, the opening having sidewalls;
depositing a nickel silicide seed in the opening using a PVD process, wherein the PVD process is performed with no bias, and wherein the PVD process includes a PVD target which comprises nickel and silicon at a 1:1 ratio; and
selectively depositing a nickel silicide layer on the nickel silicide seed using a metal-silicon organic precursor, the deposition comprising:
delivering the metal-silicon organic precursor with a reactant gas to the processing region; and
forming a plasma from the metal-silicon organic precursor and the reactant gas.

19. The method of claim 18 , further comprising annealing the nickel silicide seed and the nickel silicide layer, wherein the annealing further comprises radiant energy activation.

Assignees

• Applied Materials Inc

Inventors

• Lakshmanan Annamalai
• Mebarki Bencherki
• Singh Kaushal K
• Ma Paul F
• Naik Mehul B
• Cockburn Andrew
• Godet Ludovic

Classifications

• H10P14/414

  of metal-silicide materials · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title