Self-aligned repairing process for barrier layer

Patent metadata

Field	Value
Publication number	US-9640428-B2
Application number	US-201615077761-A
Country	US
Kind code	B2
Filing date	Mar 22, 2016
Priority date	Jan 9, 2014
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.

First claim

What is claimed is:

1. A damascene structure, comprising:
a dielectric layer disposed on a substrate and having a damascene opening;
a barrier layer disposed on the dielectric layer having the damascene opening, and comprising two portions separated by a defect;
a repair layer comprising:
a conductive portion disposed on the two portions of the barrier layer; and
an insulating portion disposed in the defect; and

a seed layer conformally disposed on the repair layer.

2. The damascene structure of claim 1 , wherein the defect is on an inner surface of the damascene opening and between the two portions of the barrier layer.

3. The damascene structure of claim 1 , wherein the defect is exposing the dielectric layer.

4. The damascene structure of claim 3 , wherein the insulating portion of the repair layer is covering the dielectric layer exposed by the defect.

5. The damascene structure of claim 1 , wherein the conductive portion of the repair layer is composed of a metal.

6. The damascene structure of claim 5 , wherein the metal is Al, Ru, Co, Mn, or Ta.

7. The damascene structure of claim 1 , wherein the insulating portion of the repair portion is composed of an insulating metal oxide.

8. The damascene structure of claim 1 , wherein the dielectric layer is made of a low-k dielectric material.

9. The damascene structure of claim 1 , wherein the dielectric layer has a surface with a plurality of free hydroxyl (—OH) groups.

10. The damascene structure of claim 1 , wherein the barrier layer is made of metal or conductive ceramic.

11. The damascene structure of claim 10 , wherein the metal is cobalt, ruthenium, tantalum, chromium, nickel, nichrome, hafnium, niobium, zirconium, vanadium or tungsten.

12. The damascene structure of claim 10 , wherein the conductive ceramic is tantalum nitride, indium oxide, copper silicide, tungsten nitride or titanium nitride.

13. The damascene structure of claim 1 , wherein the seed layer is made of Cu, Co, Al, Ag or a combination thereof.

14. The damascene structure of claim 1 , further comprising a metal layer disposed on the seed layer.

15. The damascene structure of claim 14 , wherein the metal layer is filled in the damascene opening.

16. The damascene structure of claim 14 , the metal layer is made of copper.

17. A damascene structure, comprising:
a dielectric layer disposed on a substrate and having a damascene interconnect;
a barrier layer disposed on an inner surface of the damascene interconnect and comprising two portions separated by a defect exposing the dielectric layer;
a repair layer comprising:
a metal portion laminated on the two portions of the barrier layer; and
an insulating metal oxide portion filled in the defect to cover the dielectric layer exposed by the defect; and

a seed layer conformally disposed on the repair layer.

18. The damascene structure of claim 17 , further comprising a metal interconnect disposed on the seed layer and in the damascene interconnect.

19. A damascene structure, comprising:
a dielectric layer disposed on a substrate, wherein the dielectric layer has a damascene opening;
a barrier layer disposed on an inner surface of the damascene opening;
a repair layer disposed on the barrier layer, wherein the repair layer disposed on the barrier layer is composed of a metal, and the repair layer disposed on the dielectric layer exposed by defects in the barrier layer is composed of insulating metal oxide;
a seed layer conformally disposed on the repair layer; and
a metal interconnect disposed in the damascene opening.

20. The damascene structure of claim 19 , wherein the metal of the repair layer is Al, Ru, Co, Mn, or Ta.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chi Chih-Chien
• Ko Chung-Chi
• Chen Mei-Ling
• Huang Huang-Yi
• Tung Szu-Ping
• Hsieh Ching-Hua

Classifications

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/4446

  Refractory-metal alloys · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/084

  for dual-damascene structures · CPC title