Wafer processing apparatus

Patent metadata

Field	Value
Publication number	US-10658171-B2
Application number	US-201916392491-A
Country	US
Kind code	B2
Filing date	Apr 23, 2019
Priority date	May 9, 2016
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

A laser processing apparatus including a condenser having a function of spherical aberration. Since the condenser has a function of spherical aberration, the focal point of a laser beam to be focused by the condenser and applied to a wafer can be continuously changed in position along the thickness of the wafer. Accordingly, a uniform shield tunnel composed of a fine hole and an amorphous region surrounding the fine hole can be formed so as to extend from the front side of the wafer to the back side thereof, by one shot of the laser beam.

First claim

What is claimed is:

1. A laser processing apparatus comprising:
a chuck table for holding a wafer;
laser beam applying means for applying a laser beam to said wafer held on said chuck table; and
a feeding mechanism for relatively feeding said chuck table and said laser beam applying means;
said laser beam applying means including
a laser oscillator for oscillating said laser beam, and
a condenser having a focusing lens for focusing said laser beam oscillated by said laser oscillator and applying said laser beam focused to said wafer held on said chuck table;
said condenser having a lens configured to realize spherical aberration such that a focal point to be formed by said laser beam passing through a radially inner portion of said condenser is continuously changed in position toward said chuck table from a focal point to be formed by said laser beam passing through a radially outer portion of said condenser;
said laser beam being applied to said wafer in the condition where the focal point of said laser beam is set inside said wafer so as to be continuously changed in position along the thickness of said wafer to account for changes in the thickness of said wafer, thereby forming a shield tunnel inside said wafer, said shield tunnel being composed of a fine hole and an amorphous region surrounding said fine hole.

2. The laser processing apparatus according to claim 1 , wherein the range of change in position from the focal point to be formed by said laser beam passing through the radially outer portion of said condenser to the focal point to be formed by said laser beam passing through the radially inner portion of said condenser is set to 50 to 2000 μm.

3. The laser processing apparatus according to claim 1 , wherein said lens is an aspherical lens.

4. The laser processing apparatus according to claim 1 , wherein said condenser includes a plurality of spherical lenses and a plurality of aspherical lenses.

5. A method of applying a laser beam to a wafer having a plurality of division lines for dividing the wafer into a plurality of device chips, the method comprising:
holding the wafer by a chuck table;
aligning at least one division line of the plurality of division lines of the wafer with a laser beam applying means;
setting a focal point of a laser beam emitted by said laser beam applying means using a focusing lens configured to realize spherical aberration, wherein the focal point to be formed by said laser beam passing through a radially inner portion of said focusing lens continuously changes in position toward said chuck table from said focal point to be formed by said laser beam passing through a radially outer portion of said focusing lens; and
applying said laser beam to said at least one division line using said laser beam applying means, wherein said focal point of said laser beam is set inside said wafer so as to be continuously changed in position along a thickness of said wafer to account for changes in said thickness of said wafer, thereby forming a plurality of shield tunnels inside said wafer along said at least one division line, each of said shield tunnels including a fine hole and an amorphous region surrounding said fine hole.

6. The method according to claim 5 , wherein the range of change in position of said focal point of said laser beam toward said wafer from said focal point is set to 50 to 2000 μm.

7. The method according to claim 5 , further comprising a condenser including said focusing lens, wherein said condenser is configured to produce said spherical aberration.

8. The method according to claim 5 , wherein the range of change in position from the focal point to be formed by said laser beam passing through a radially outer portion of said condenser to the focal point to be formed by said laser beam passing through a radially inner portion of said condenser is set to 50 to 2000 μm.

9. The method according to claim 5 , further comprising a focal point correcting plate located between said focusing lens and said wafer for correcting the position of the focal point of said laser beam to be focused by said focusing lens.

10. The method according to claim 9 , wherein said focal point correcting plate is made of glass.

11. The method according to claim 9 , wherein said focal point correcting plate includes a spherical convex surface.

12. The method according to claim 5 , wherein said focusing lens is an aspherical lens.

13. The method according to claim 5 , wherein setting a focal point of a laser beam emitted by said laser beam applying means includes using a plurality of spherical lenses and a plurality of aspherical lenses configured to realize spherical aberration.

Assignees

• Disco Corp

Inventors

• Kirihara Naotoshi

Classifications

• B23K26/0617

  and with spots spaced along the common axis · CPC title

• B23K26/0648

  comprising lenses · CPC title

• B23K26/032 Primary

  using optical means · CPC title

• B23K26/38

  by boring or cutting · CPC title

• B23K26/384

  of specially shaped holes · CPC title