Resist stripper and resist stripping method

US10656519B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10656519-B2
Application numberUS-201715818211-A
CountryUS
Kind codeB2
Filing dateNov 20, 2017
Priority dateNov 22, 2016
Publication dateMay 19, 2020
Grant dateMay 19, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An object of the present invention is to provide a resist stripper for stripping resist from a substrate with a metallic line and/or a metal oxide film, which has excellent stripping properties and shows reduced reattachment of stripped resist, and which is also excellent in antifoaming properties. The resist stripper contains: (A) an amine; (B) an organic solvent; and (C) 5.0 wt % or less of a sulfonic or carboxylic acid having a weight average molecular weight of 5,000 to 1,000,000 or a salt thereof, and the resist stripper is free of (D) water, or contains (D) 60 wt % or less of water.

First claim

Opening claim text (preview).

The invention claimed is: 1. A resist stripper, comprising: (A) an amine; (B) an organic solvent; and (C) 0.0025 wt % or more and 1.5 wt % or less of a polyanilinesulfonic acid having a weight average molecular weight of 5,000 to 1,000,000 or a salt thereof. 2. The resist stripper according to claim 1 , wherein the resist stripper comprises 1 to 40 wt % of an alkanolamine as the component (A). 3. The resist stripper according to claim 1 , which is used to strip resist from a substrate with copper and/or IGZO. 4. A method for stripping resist from a substrate with a metallic line and/or a metal oxide film, and inhibiting reattachment of stripped resist to the metallic line and/or the metal oxide film, the method comprising using the resist stripper according to claim 1 . 5. The method for stripping resist according to claim 4 , wherein the metallic line is formed of copper and the metal oxide film is formed of IGZO. 6. The method according to claim 4 , wherein the metallic line is copper and/or the metal oxide film is IGZO. 7. The resist stripper according to claim 1 , wherein the resist stripper further comprises (D) water in an amount of 60 wt % or less. 8. The resist stripper according to claim 7 , wherein the component (B) and the component (D) are present in a ratio by weight of (B):(D) of 0.2:1 to 70:1.

Assignees

Inventors

Classifications

  • Organic solvents · CPC title

  • G03F7/425Primary

    containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

  • G03F7/0035Primary

    Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title

  • containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides · CPC title

  • Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

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What does patent US10656519B2 cover?
An object of the present invention is to provide a resist stripper for stripping resist from a substrate with a metallic line and/or a metal oxide film, which has excellent stripping properties and shows reduced reattachment of stripped resist, and which is also excellent in antifoaming properties. The resist stripper contains: (A) an amine; (B) an organic solvent; and (C) 5.0 wt % or less of a…
Who is the assignee on this patent?
Nagase Chemtex Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/425. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 19 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).