Approach to prevent collapse of high aspect ratio Fin structures for vertical transport Fin field effect transistor devices

Patent metadata

Field	Value
Publication number	US-10629489-B2
Application number	US-201816139932-A
Country	US
Kind code	B2
Filing date	Sep 24, 2018
Priority date	Sep 24, 2018
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

A method of preventing the collapse of fin structures is provided. The method includes forming a plurality of vertical fins on a substrate, and a hard mask stack on each of the vertical fins. The method further includes forming a cover layer on the plurality of vertical fins and hard mask stacks, and reducing the height of the cover layer to expose an upper portion of each of the hard mask stacks. The method further includes forming a bracing layer on the reduced height cover layer and exposed portion of each of the hard mask stacks, and removing a portion of the bracing layer to expose a portion of the reduced height cover layer and form a bracing segment on the exposed portion of each of the hard mask stacks. The method further includes removing the reduced height cover layer.

First claim

What is claimed is:

1. A method of preventing the collapse of fin structures, comprising:
forming a plurality of vertical fins on a substrate, and a hard mask stack on each of the vertical fins;
forming a cover layer on the plurality of vertical fins and hard mask stacks;
reducing the height of the cover layer to expose an upper portion of each of the hard mask stacks and thus forming a reduced height cover layer;
forming a bracing layer on the reduced height cover layer and exposed portion of each of the hard mask stacks;
removing a portion of the bracing layer to expose a portion of the reduced height cover layer and form a bracing segment on the exposed portion of each of the hard mask stacks; and
removing the reduced height cover layer.

2. The method of claim 1 , wherein the cover layer is an organic planarization layer material.

3. The method of claim 2 , wherein the organic planarization layer material is a phenolic functionality containing molecular glass type material.

4. The method of claim 2 , wherein the bracing layer is an organic planarization layer material different from the organic planarization layer material of the cover layer.

5. The method of claim 4 , wherein the bracing layer is a near frictionless carbon or polyimide material.

6. The method of claim 1 , wherein the bracing layer is formed by a spin-on process.

7. The method of claim 1 , wherein the bracing layer is formed by a conformal deposition.

8. The method of claim 1 , wherein the bracing layer is formed by a selective deposition.

9. The method of claim 1 , wherein the reduced height cover layer is removed using a polar organic solvent.

10. A method of preventing the collapse of fin structures, comprising:
forming a plurality of vertical fins on a substrate, and a hard mask stack on each of the vertical fins;
forming a cover layer on the plurality of vertical fins and hard mask stacks;
reducing the height of the cover layer to expose an upper portion of each of the hard mask stacks and thus forming a reduced height cover layer;
forming a bracing layer on the reduced height cover layer and exposed portion of each of the hard mask stacks;
removing a portion of the bracing layer to expose a portion of the reduced height cover layer and form a bracing segment on the exposed portion of each of the hard mask stacks;
removing the reduced height cover layer;
exposing the plurality of vertical fins to a wet cleaning solution; and
removing the bracing segment.

11. The method of claim 10 , wherein the plurality of vertical fins and hard mask stack has an aspect ratio of at least 10:1.

12. The method of claim 11 , wherein the plurality of vertical fins have a height in a range of about 50 nanometers (nm) to about 100 nm, and the plurality of vertical fins have a width in a range of about 5 nm to about 12 nm.

13. The method of claim 10 , wherein the hard mask stack includes a first dielectric material layer on each of the plurality of vertical fins, a second dielectric material layer on the first dielectric material layer, and a third dielectric material layer on the second dielectric material layer.

14. The method of claim 13 , wherein the first dielectric material layer and third dielectric material layer are a nitride dielectric material, and the second dielectric material layer is an oxide dielectric material.

15. The method of claim 13 , wherein the first dielectric material layer and third dielectric material layer have a height in a range of about 40 nm to about 60 nm, and the second dielectric material layer has a height in a range of about 25 nm to about 50 nm.

16. A method of preventing the collapse of fin structures, comprising:
forming a plurality of vertical fins on a substrate, and a hard mask stack on each of the vertical fins, wherein the hard mask stack includes a first dielectric material layer on each of the plurality of vertical fins, a second dielectric material layer on the first dielectric material layer, and a third dielectric material layer on the second dielectric material layer;
forming a bracing segment on each of the hard mask stacks; and
exposing the plurality of vertical fins to a wet cleaning solution.

17. The method of claim 16 , wherein the bracing segment is formed by selectively forming a protruding growth block on the exposed portions of the second dielectric material layer.

18. The method of claim 17 , wherein the bracing segment is selectively formed using a selective atomic layer deposition process.

19. The method of claim 18 , wherein the bracing segment is hafnium oxide.

20. The method of claim 19 , further comprising removing the bracing segment using a selective isotropic etch.

Assignees

• IBM

Inventors

• Seshadri Indira
• Sieg Stuart A
• Joseph Praveen
• De Silva Ekmini A

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title