Anti-wetting coating for Si-based MEMS fluidic device, and method of application of same

Patent metadata

Field	Value
Publication number	US-10626013-B2
Application number	US-201815945595-A
Country	US
Kind code	B2
Filing date	Apr 4, 2018
Priority date	Apr 4, 2018
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

A photo-patterned fluorocarbon monolayer directly grafted to Si surface atoms provides anti-wetting performance at controlled locations, wherein the Si surface oxide is etched and reacted with fluorocarbon chains with a terminal C—C double bond, resulting in Si—C surface. As the direct Si—C linkages are chemically robust, and much more resistant to decomposition than Si—O—C bonds, the resulting surface does not suffer from the shortcomings of current MEMS dispensers.

First claim

The invention claimed is:

1. A method for coating a silicon substrate on a microelectromechanical system fluid dispenser including one or more nozzles, the method comprising:
removing an oxide layer from a surface of the silicon substrate, the surface of the silicon substrate including an area around the one or more nozzles; and
treating a portion of the surface of the silicon substrate with radiation to react the portion of the surface of the silicon substrate with C═C—CH 2 —CF 2 —CF 2 —CF 3 ,
wherein the area of the surface of the silicon substrate around the one or more nozzles is not treated with the radiation.

2. The method of claim 1 , wherein the removing the oxide layer includes treating the silicon substrate with a hydrogen fluoride compound.

3. The method of claim 1 , wherein the radiation is selected from the group consisting of UV light, electromagnetic radiation, thermal radiation, infrared (“IR”), derivatives thereof, and combination therefrom.

4. The method of claim 3 , further comprising positioning a photomask between the surface of the silicon substrate and the radiation such that the portion of the surface of the silicon substrate is treated with the radiation and the area of the surface of the silicon substrate around the one or more nozzles is not treated with the radiation.

5. The method of claim 3 , further comprising adding a sacrificial electron acceptor to accelerate the reacting the portion of the surface of the silicon substrate with the C═C—CH 2 —CF 2 —CF 2 —CF 3 .

6. The method of claim 1 , further comprising controlling a degree of reaction of the portion of the surface of the silicon substrate with the C═C—CH 2 —CF 2 —CF 2 —CF 3 .

7. The method of claim 1 , wherein the radiation is UV light.

8. The method of claim 1 , wherein the one or more nozzles comprises a plurality of nozzles.

Assignees

• Canon Kk

Inventors

• Traub Matthew C

Classifications

• B81B2201/052

  Ink-jet print cartridges · CPC title

• B81C1/00206 Primary

  Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B81C2201/016

  Passivation · CPC title

• B81B2201/057

  Micropipets, dropformers · CPC title