High speed level translator

US10615797B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10615797-B2
Application numberUS-201916250364-A
CountryUS
Kind codeB2
Filing dateJan 17, 2019
Priority dateAug 19, 2014
Publication dateApr 7, 2020
Grant dateApr 7, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A high speed VPP level translator circuit using thin-oxide field effect transistors (FETs) and methods of use are disclosed. The level translator includes a resistor divider and a one-shot circuit in parallel with the resistor divider. The one-shot circuit conducts to assist a transition from a first state to a second state, and is non-conducting during the transition from the second state to the first state.

First claim

Opening claim text (preview).

What is claimed: 1. A level translator comprising: a one-shot circuit coupled to a controllable resistor divider connected between an input voltage (VPP) and ground; transistors coupled in parallel with a first resistor of the controllable resistor divider; and an inverter chain coupled to the controllable resistor divider to receive a voltage level VPP 2 and having outputs to control gates of the transistors, wherein the level translator is a 4-level translator circuit which translates the input voltage VPP to output levels VPP 2 /VPP at the outputs, a voltage stress applied to the transistors is limited to a level of a logic input signal inputted to control the controllable resistor divider, and the VPP 2 and the VPP are supplied by the controllable resistor divider to supply inverters of the inverter chain. 2. The level translator of claim 1 , wherein the one-shot circuit translates from a low voltage to a high voltage using the transistors which are arranged in parallel with the first resistor of the controllable resistor divider. 3. The level translator of claim 2 , wherein the inverter chain has outputs controlling gates of the transistors to generate an output signal oscillating between the supply voltage VPP 2 and the supply voltage VPP to provide a conduction path between an output level of the first resistor for operation between voltage levels with which the level and the ground can be translated to the voltage VPP 2 and the supply voltage VPP. 4. The level translator of claim 1 , wherein the transistors are provided with a feedback loop to improve switching performance in a direction serviced by a resistor pull up. 5. The level translator of claim 1 , wherein the controllable resistor divider comprises the first resistor and a second resistor, in series, which is enabled by a first transistor and a second transistor. 6. The level translator of claim 5 , wherein resistive values of the first resistor and second resistor are chosen to output a voltage signal V 2 IN of approximately the voltage VPP 2 when the first transistor receives a Vdd level logic input signal, and when the controllable resistor divider is disabled, the voltage signal V 2 IN is approximately the voltage VPP. 7. The level translator of claim 6 , wherein: the one-shot circuit comprises a pull-up stack comprising a third transistor and a fourth transistor, in series, which allows conduction from the voltage VPP to the voltage signal V 2 IN; the pull-up stack is enabled during transition of low-to-high switching; and the pull-up stack is disabled when the low-to-high switching is complete. 8. The level translator of claim 7 , wherein the inverter chain comprises inverters connected in series. 9. The level translator of claim 8 , wherein the inverters are connected in series and establish a pull-up gate signal and its complement to the third transistor and the fourth transistor. 10. A level translator, comprising: a controllable resistor divider connected between an input voltage (VPP) and ground, the controllable resistor divider comprising a first resistor and a second resistor; a one-shot circuit coupled to the controllable resistor divider and comprising a pull-up stack of transistors coupled in parallel with the first resistor of resistor divider; and an inverter chain coupled to the controllable resistor divider to receive a voltage level VPP 2 and having outputs controlling to control gates of the transistors, wherein the level translator is a 4-level translator circuit which translates the input voltage VPP to output levels VPP 2 /VPP at the outputs, a voltage stress applied to the transistors is limited to a level of a logic input signal inputted to control the controllable resistor divider, and the VPP 2 and the VPP are supplied by the controllable resistor divider to supply inverters of the inverter chain. 11. A level translator comprising: a one-shot circuit coupled to a controllable resistor divider and comprising connected between an input voltage (VPP) and ground; transistors coupled in parallel with a first resistor of the controllable resistor divider; and an inverter chain coupled to the controllable resistor divider to receive a voltage level VPP 2 and having outputs to control gates of the transistors, wherein: the controllable resistor divider comprises the first resistor and a second resistor, in series, which is enabled by a first transistor and a second transistor, resistive values of the first resistor and second resistor are chosen to output a voltage signal V 2 IN of approximately VPP 2 when the first transistor receives a Vdd level logic input signal, and when the controllable resistor divider is disabled, the voltage signal V 2 IN is approximately VPP, and wherein the level translator is a 4-level translator circuit which translates the input voltage VPP to output levels VPP 2 /VPP at the outputs, a voltage stress applied to the first transistor and the second transistor is limited to a level of a logic input signal inputted to control the controllable resistor divider, and the VPP 2 and the VPP are supplied by the controllable resistor divider to supply inverters of the inverter chain.

Assignees

Inventors

Classifications

  • using MOSFET {or insulated gate field-effect transistors, i.e. IGFET}(H03K19/096 takes precedence) · CPC title

  • by means of a pull-up or down element · CPC title

  • synchronous, i.e. using clock signals · CPC title

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What does patent US10615797B2 cover?
A high speed VPP level translator circuit using thin-oxide field effect transistors (FETs) and methods of use are disclosed. The level translator includes a resistor divider and a one-shot circuit in parallel with the resistor divider. The one-shot circuit conducts to assist a transition from a first state to a second state, and is non-conducting during the transition from the second state to t…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H03K19/01855. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 07 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).