Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

Patent metadata

Field	Value
Publication number	US-10604841-B2
Application number	US-201615378854-A
Country	US
Kind code	B2
Filing date	Dec 14, 2016
Priority date	Dec 14, 2016
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

First claim

What is claimed is:

1. A substrate processing system, comprising:
a first chamber including a substrate support;
a showerhead arranged above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber,
wherein the showerhead includes:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum including:
a first plenum formed in the first surface of the middle layer and configured to receive heat transfer fluid from a first inlet;
a second plenum formed in the first surface of the middle layer and configured to output heat transfer fluid to an outlet; and
a plurality of flow channels formed in the first surface of the middle layer and in fluid communication between the first plenum and the second plenum, the plurality of flow channels configured to direct the heat transfer fluid through a center portion of the showerhead to control a temperature of the showerhead;

a secondary gas plenum including a second inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber; and
a plurality of through holes passing through the top, middle, and bottom layers,
wherein the through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

2. The substrate processing system of claim 1 , wherein:
the first plenum in fluid communication with the first inlet;
a third plenum formed in the first surface of the middle layer and in fluid communication with first ends of the flow channels;
a first plurality of restrictions arranged between the first plenum and the third plenum to restrict fluid flow therebetween;
a fourth plenum formed in the first surface of the middle layer and in fluid communication with second ends of the flow channels that are opposite the first ends of the flow channels;
the second plenum in fluid communication with the outlet; and
a second plurality of restrictions arranged between the fourth plenum and the second plenum to restrict fluid flow therebetween.

3. The substrate processing system of claim 1 , wherein the plurality of flow channels extend in a radial direction from one side of the showerhead to an opposite side of the showerhead.

4. The substrate processing system of claim 3 , wherein the plurality of flow channels define a straight path.

5. The substrate processing system of claim 3 , wherein the plurality of flow channels define a curved path.

6. The substrate processing system of claim 5 , wherein the plurality of flow channels define a sinusoidal-shaped path.

7. The substrate processing system of claim 1 , wherein the secondary gas plenum includes;
a first gas plenum;
a second gas plenum; and
a flow restriction arranged between the first gas plenum and the second gas plenum.

8. The substrate processing system of claim 7 , wherein the flow restriction comprises:
a first plurality of walls; and
a plurality of slots defined between the first plurality of walls.

9. The substrate processing system of claim 8 , wherein the first plurality of walls is arcuate-shaped.

10. The substrate processing system of claim 8 , further comprising a second plurality of walls arranged around the through holes in the second gas plenum.

11. The substrate processing system of claim 10 , wherein the second plurality of walls is cylinder-shaped.

12. The substrate processing system of claim 7 , wherein the secondary gas injectors are in fluid communication with the second gas plenum.

13. The substrate processing system of claim 12 , further comprising a plurality of restrictions arranged between the second gas plenum and the secondary gas injectors.

14. The substrate processing system of claim 1 , further comprising:
a second chamber arranged above the first chamber, wherein the showerhead is arranged between the first chamber and the second chamber;
a coil arranged around the second chamber; and
an RF generator connected to the coil to generate plasma in the second chamber.

15. The substrate processing system of claim 1 , wherein at least one of the flow channels includes a flow restriction.

16. The substrate processing system of claim 1 , wherein the heat transfer fluid comprises liquid.

17. The substrate processing system of claim 1 , wherein the heat transfer fluid comprises gas.

18. The substrate processing system of claim 1 , wherein the heat transfer fluid does not flow into the first chamber.

19. The substrate processing system of claim 1 , wherein the secondary gas injectors extend a predetermined distance from a bottom surface of the showerhead, wherein the predetermined distance is in a range from 0.1″ to 1.5″.

20. The substrate processing system of claim 1 , wherein the through holes have a diameter in a range from 0.05″ to 0.3″.

21. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends from a bottom surface thereof and that is located radially outside of the plurality of through holes and the plurality of secondary gas injectors.

22. The substrate processing system of claim 1 , wherein the showerhead includes a cylindrical wall that extends upwardly from a top surface thereof and that is located radially outside of the plurality of through holes and the plurality of secondary gas injectors.

23. The substrate processing system of claim 1 , further comprising a first O-ring arranged between a top surface of the showerhead and a second chamber and a second O-ring arranged between a bottom surface of the showerhead and the first chamber.

24. A substrate processing system, comprising:
a first chamber including a substrate support;
a showerhead arranged above the first chamber and configured to filter ions and deliver radicals from a plasma source to the first chamber,
wherein the showerhead includes:
a top layer;
a bottom layer;
a middle layer having a first surface that directly contacts the top layer and a second surface that directly contacts the bottom layer;
a heat transfer fluid plenum including:
a first plenum formed in the first surface of the middle layer and configured to receive heat transfer fluid from a first inlet;
a second plenum formed in the first surface of the middle layer and configured to output heat transfer fluid to an outlet; and
a plurality of flow channels formed in the first surface of the middle layer and in fluid communication between the first plenum and the second plenum, the plurality of flow channels configured to direct the heat transfer fluid through a center portion of the showerhead to control a temperature of the showerhead;

a secondary gas plenum including a second inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber; and
a plurality of through holes passing through the top, middle, and bottom layers,
wherein the through holes are not in fluid communication with the first plenum, the second plenum, the flow channels, or the secondary gas plenum.

Assignees

• Lam Res Corp

Inventors

• Batzer Rachel
• Qiu Huatan
• Varadarajan Bhadri
• Breiling Patrick Girard
• Gong Bo
• Schlosser Will
• Gui Zhe
• Tan Taide
• Hohn Geoffrey

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title