Phase transformation in transition metal dichalcogenides

Patent metadata

Field	Value
Publication number	US-9673390-B2
Application number	US-201514627296-A
Country	US
Kind code	B2
Filing date	Feb 20, 2015
Priority date	Feb 21, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

Devices including transition metal dichalcognides and methods of forming and operating such devices are disclosed. In one disclosed method, a layer of a transition metal dichalcogenide is provided, and a phase transformation of at least a region of the layer of the transition metal dichalcogenide is induced.

First claim

What is claimed is:

1. An electronic or optoelectronic device, comprising:
a layer of a transition metal dichalcogenide; and
a pair of electrodes connected to the layer of the transition metal dichalcogenide,
wherein the device is a transistor device, the pair of electrodes corresponds to a source electrode and a drain electrode, the transistor device includes a channel connected between the source electrode and the drain electrode, the channel includes the layer of the transition metal dichalcogenide, and the transistor device further includes a gate electrode connected to and in direct contact with the layer of the transition metal dichalcogenide.

2. The device of claim 1 , wherein the gate electrode is configured to apply an electrical stimulus to the layer of the transition metal dichalcogenide to induce a phase transformation of at least a region of the layer of the transition metal dichalcogenide.

3. The device of claim 1 , wherein the transition metal dichalcogenide is selected from at least one of MoTe 2 , MoSe 2 , MoS 2 , WTe 2 , WSe 2 , WS 2 , alkali metal-doped MoTe 2 , alkali metal-doped MoSe 2 , alkali metal-doped MoS 2 , alkali metal-doped WTe 2 , alkali metal-doped WSe 2 , or alkali metal-doped WS 2 .

4. The device of claim 2 , wherein the phase transformation is a transformation between semiconducting and metallic phases of the transition metal dichalcogenide.

5. The device of claim 4 , wherein the semiconducting and metallic phases correspond to different crystal structures of the transition metal dichalcogenide.

6. The device of claim 2 , further comprising an electrical source connected to the gate electrode and configured to apply a bias voltage having a magnitude of at least 1 V.

7. The device of claim 2 , further comprising an electrical source connected to the gate electrode and configured to apply a bias voltage having a magnitude in a range of 0.5 V to 1 V.

8. The device of claim 1 , wherein the transition metal dichalcogenide is selected from at least one of alkali metal-doped MoTe 2 , alkali metal-doped MoSe 2 , alkali metal-doped MoS 2 , alkali metal-doped WTe 2 , alkali metal-doped WSe 2 , or alkali metal-doped WS 2 .

9. The device of claim 1 , further comprising a metal substrate, and wherein the layer of the transition metal dichalcogenide is in direct contact with the metal substrate.

10. The device of claim 1 , further comprising a semiconductor substrate, and wherein the layer of the transition metal dichalcogenide is in direct contact with the semiconductor substrate.

Assignees

• Univ Leland Stanford Junior

Inventors

• Reed Evan J
• Duerloo Karel-Alexander
• Li Yao

Classifications

• G11C13/047

  using electro-optical elements (G11C13/042 takes precedence) · CPC title

• G02F2203/11

  involving infrared radiation · CPC title

• G02F1/03

  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect (G02F1/061 takes precedence) · CPC title

• G02F1/0054

  Structure, phase transitions, NMR, ESR, Moessbauer spectra · CPC title

• G11C13/0004 Primary

  comprising amorphous/crystalline phase transition cells · CPC title