Symmetric target design in scatterometry overlay metrology

Patent metadata

Field	Value
Publication number	US-10591406-B2
Application number	US-201615092329-A
Country	US
Kind code	B2
Filing date	Apr 6, 2016
Priority date	Oct 18, 2012
Publication date	Mar 17, 2020
Grant date	Mar 17, 2020

Abstract

Metrology methods, systems and targets are provided, which implement a side by side paradigm. Adjacent cells with periodic structures are used to extract the overlay error, e.g., by introducing controllable phase shifts or image shifts which enable algorithmic computation of the overlay. The periodic structures are designed to exhibit a rotational symmetry to support the computation and reduce errors.

First claim

What is claimed is:

1. A metrology target comprising:
at least three cells, wherein the at least three cells comprises a first cell, a second cell, and a third cell, wherein the first cell comprises a first parallel periodic structure disposed at a first layer, wherein the second cell comprises a second parallel periodic structure disposed at a second layer, and the third cell comprises a third parallel periodic structure disposed at a third layer, wherein the first layer is different from the second layer and the third layer, wherein the second layer is different from the third layer, wherein each of the first parallel periodic structure, the second parallel periodic structure and the third parallel periodic structure include a same pitch,
wherein the pitch of the first parallel periodic structure, the second parallel periodic structure, and the third parallel periodic structure is uniform across each of the first parallel periodic structure, the second parallel periodic structure, and the third parallel periodic structure,
wherein a perimeter of the metrology target is defined by one or more cell edges, wherein at least one of the first parallel periodic structure, the second parallel periodic structure, or the third parallel periodic structure is disposed within the perimeter of the metrology target such that it is central with respect to the one or more cell edges,
wherein the pitch of the first parallel periodic structure and the pitch of the second parallel periodic structure is uniform across the first cell,
wherein the first cell overlaps with at least one of the second cell or the third cell,
wherein the first cell, the second cell, and the third cell are individually invariant with respect to a selected rotational transformation about an axis perpendicular to at least one of the first cell, the second cell, or the third cell.

2. The metrology target of claim 1 , wherein the selected rotational transform is a 180° rotation about an axis perpendicular to at least one of the first cell, the second cell, or the third cell.

3. The metrology target of claim 1 , wherein the first cell includes at least two parallel gratings invariant under a 180° rotation about an axis perpendicular to the first cell, wherein the second Cell includes at least two parallel gratings invariant under a 180° rotation about an axis perpendicular to the second cell.

4. The metrology target of claim 1 , wherein at least one of the first parallel periodic structure, the second parallel periodic structure, or the third parallel periodic structure comprises one or more gratings.

5. The metrology target of claim 1 , wherein at least one of the first parallel periodic structure, the second parallel periodic structure, or the third parallel periodic structure comprises at least two parallel gratings, wherein the at least two parallel gratings are invariant under a 180° rotation about an axis perpendicular to the first cell.

6. The metrology target of claim 1 , wherein the metrology target is configured as a scatterometry overlay (SCOL) target.

7. The metrology target of claim 1 , wherein the metrology target is configured as an optical critical dimension (OCD) target.

8. The metrology target of claim 1 , wherein the first parallel periodic structure, the second parallel periodic structure, and the third parallel periodic structure are parallel.

9. The metrology target of claim 1 , wherein the first parallel periodic structure is orthogonal to at least one of the second parallel periodic structure or the third parallel periodic structure.

10. The metrology target of claim 9 , wherein the first parallel periodic structure is orthogonal the second parallel periodic structure, and wherein the second parallel periodic structure is orthogonal to the third parallel periodic structure.

11. The metrology target of claim 1 , wherein the first parallel periodic structure and the second parallel periodic structure are oriented with respect to one of two directions of the metrology target.

12. The metrology target of claim 1 , wherein the selected rotational transform is a 180° rotation about an axis perpendicular to at least one of the first cell, the second cell, or the third cell.

13. The metrology target of claim 1 , wherein the pitch of the first parallel periodic structure is equivalent to the pitch of the second parallel periodic structure.

14. The metrology target of claim 13 , wherein the pitch of the third parallel periodic structure is equivalent to the pitch of the first parallel periodic structure and the second parallel periodic structure.

15. The metrology target of claim 1 , wherein the first cell overlaps with both the second cell and the third cell.

16. The metrology target of claim 1 , wherein the first parallel periodic structure, the second parallel periodic structure, and the third parallel periodic structure are disposed within the perimeter of the metrology target such that each of the first parallel periodic structure, the second parallel periodic structure, and the third parallel periodic structure are central with respect to the one or more cell edges.

17. The metrology target of claim 1 , wherein the metrology target including the first cell, the second cell, and the third cell is invariant with respect to a third selected rotational transformation about an axis perpendicular to the first cell, the second cell, and the third cell.

18. The metrology target of claim 1 , further comprising at least one additional cell disposed in at least one of the first layer, the second layer, or the third layer, wherein the at least one additional cell comprises at least one additional periodic structure.

19. The metrology target of claim 1 , further comprising a fourth cell disposed at a fourth layer, wherein the fourth layer is different from the first layer, the second layer, and the third layer.

20. The metrology target of claim 19 , wherein the first cell at least partially overlaps the fourth cell.

Assignees

• Kla Tencor Corp

Inventors

• Bringoltz Barak
• Kandel Daniel
• Feler Yoel
• Sapiens Noam
• Irina Paykin
• Svizher Alexander
• Aloni Meir
• Ben Dov Guy
• Shalmoni Hadar
• Levinski Vladimir

Classifications

• G03F7/70683

  Mark designs · CPC title

• G01B11/272

  using photoelectric detection means · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N21/956

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• G01N21/01 Primary

  Arrangements or apparatus for facilitating the optical investigation · CPC title