Metrology method and apparatus

Patent metadata

Field	Value
Publication number	US-9903823-B2
Application number	US-201514945257-A
Country	US
Kind code	B2
Filing date	Nov 18, 2015
Priority date	Nov 21, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

First claim

What is claimed is:

1. A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising:
obtaining an apparent overlay error;
obtaining a systematic error caused by a factor other than misalignment of the first and second structures, the systematic error determined based on a measurement of a pattern in the layer of the first structure and based on a separate measurement of a pattern in the layer of the second structure; and
determining the overlay error by removing the systematic error from the apparent overlay error.

2. The method of claim 1 , wherein obtaining the systematic error comprises determining the systematic error based on the measurement of the pattern in the layer of the first structure after the first structure is fabricated and before the second structure is fabricated.

3. The method of claim 1 , wherein obtaining the systematic error comprises determining the systematic error based on the measurement of the pattern in the layer of the first structure and the pattern in the layer of the second structure after both the first and second structures are fabricated.

4. The method of claim 1 , wherein part of the first structure but not part of the second structure is in a first area, wherein the part of the first structure corresponds to the pattern in the layer of the first structure, and wherein parts of both the first and second structures are in a third area.

5. The method of claim 4 , wherein part of the second structure but not part of the first structure is in a second area, and wherein the part of the second structure corresponds to the pattern in the layer of the second structure.

6. The method of claim 4 , wherein obtaining the systematic error comprises obtaining an apparent characteristic of diffraction orders of both the first and second structures in the third area, and a characteristic of the first structure in the first area, the characteristic of the first structure comprising a geometrical characteristic of the first structure in the first area and/or a characteristic of diffraction orders of the first structure in the first area.

7. The method of claim 5 , wherein obtaining the systematic error comprises obtaining an apparent characteristic of diffraction orders of both the first and second structures in the third area, a characteristic of the first structure in the first area, and a characteristic of the second structure in the second area, wherein the characteristic of the first structure comprises a geometrical characteristic of the first structure in the first area and/or a characteristic of diffraction orders of the first structure in the first area and the characteristic of the second structure comprises a geometrical characteristic of the second structure in the second area and/or a characteristic of diffraction orders of the second structure in the second area.

8. The method of claim 6 , wherein the characteristic of the first structure comprises periodicity, shape, size or a combination selected therefrom, of the first structure.

9. The method of claim 1 , wherein obtaining the apparent overlay error comprises interpolating or extrapolating from a fitted curve.

10. The method of claim 1 , further comprising adjusting a characteristic of the lithographic process based on the overlay error.

11. The method of claim 1 , wherein the measurement of the first and second patterns are obtained from a common illumination of both patterns by a measurement beam.

12. A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structure are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising:
obtaining an apparent characteristic of diffraction orders of diffraction by an overlapping portion of the first and second structures;
obtaining a corrected characteristic of the diffraction orders, the corrected characteristic determined based on a measurement of a pattern in the layer of the first structure and from a separate measurement of a pattern in the layer of the second structure; and
determining the overlay error from the corrected characteristic.

13. The method of claim 12 , wherein obtaining the corrected characteristic comprises subtracting from the apparent characteristic a contribution of a factor other than misalignment of the first and second structures.

14. The method of claim 13 , wherein obtaining the corrected characteristic comprises determining the contribution based on the measurement of the pattern in the layer of the first structure after the first structure is fabricated and before the second structure is fabricated.

15. The method of claim 13 , wherein obtaining the corrected characteristic comprises determining the contribution based on the measurement of the pattern in the layer of the first structure and the pattern in the layer of the second structure after both the first and second structures are fabricated.

16. The method of claim 12 , wherein part of the first structure but not part of the second structure is in a first area, wherein the part of the first structure corresponds to the pattern in the layer of the first structure, and wherein parts of both the first and second structures are in a third area.

17. The method of claim 12 , wherein obtaining the apparent characteristic comprises optically measuring diffraction.

18. The method of claim 12 , further comprising adjusting a characteristic of the lithographic process based on the overlay error.

19. A computer program product comprising a non-transitory computer readable medium having instructions recorded thereon, the instructions configured to cause a computer system to:
obtain an apparent overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process;
obtain a systematic error caused by a factor other than misalignment of the first and second structures, the systematic error determined based on a measurement of a pattern in the layer of the first structure and based on a separate measurement of a pattern in the layer of the second structure; and
determine an overlay error by removing the systematic error from the apparent overlay error.

20. A computer program product comprising a non-transitory computer readable medium having instructions recorded thereon, the instructions configured to cause a computer system to:
obtain an apparent characteristic of diffraction orders of diffraction by an overlapping portion of first and second structures, wherein the first structure and second structure are on different layers on a substrate and are imaged onto the substrate by a lithographic process;
obtain a corrected characteristic of the diffraction orders, the corrected characteristic determined based on a measurement of a pattern in the layer of the first structure and from a separate measurement of a pattern in the layer of the second structure; and
determine an overlay error between the first structure and the second structure from the corrected characteristic.

Assignees

• Asml Netherlands Bv

Inventors

• Lu Yen Wen
• Chen Jay Jianhui
• Liu Wei
• Menchtchikov Boris
• Wang Jen Shiang
• Huang Te Chih

Classifications

• G01N21/8806 Primary

  Specially adapted optical and illumination features · CPC title

• G03F7/70516 Primary

  Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70683

  Mark designs · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title