Scanning probe inspector

Patent metadata

Field	Value
Publication number	US-10585115-B2
Application number	US-201816130699-A
Country	US
Kind code	B2
Filing date	Sep 13, 2018
Priority date	Dec 6, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

First claim

What is claimed is:

1. A scanning probe inspector, comprising:
a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench formed in a wafer, the trench extending in a first direction;
a trench detector that acquires location information of the trench using the probe, wherein the location information includes depth information of the trench;
a controller that inserts the tip into a first point the wafer at a location where there exists the trench based on the location information acquired by the trench detector, and moves the tip in the first direction through the trench at first inspection depth using the location information, and moves the tip in the first direction through the trench at a second inspection depth different from the first inspection depth using the location information; and
a defect detector that detects a defect on a sidewall of the trench at the first or second inspection depths as the tip is moved in the first direction through the trench.

2. The scanning probe inspector of claim 1 , wherein the tip is entirely formed of an exposed metal.

3. The scanning probe inspector of claim 2 , wherein
the controller inserts the tip into the first point up to the first inspection depth or up to the second inspection depth, and moves the tip along the trench based on the location information, and
the defect detector includes a DC bias voltage supplier that supplies a DC bias voltage to the wafer and the probe, an RF signal supplier that supplies an RF signal to the probe wherein the RF signal is emitted from the entire probe, a signal detector that detects a first RF signal reflected from the trench as the tip is moved along the trench at the first inspection depth, and detects a second RF signal reflected from the trench as the tip is moved along the trench at the second inspection depth, and an analyzer that detects the defect in the trench based on variations in a difference between the first and second RF signals.

4. The scanning probe inspector of claim 2 , wherein
the controller inserts the tip into the first point up to the first inspection depth or up to the second inspection depth, and moves the tip along the trench based on the location information, and
the defect detector includes a DC bias voltage supplier that supplies a DC bias voltage to the wafer and the probe, a tunneling current measuring unit which measures a first tunneling current sensed from the entire tip as the tip is moved along the trench at the first inspection depth and measures a second tunneling current sensed from the entire tip as the tip is moved along the trench at the second inspection depth, and an analyzer that detects the defect in the trench based on variations in a difference between the first and second tunneling currents.

5. A scanning probe inspector comprising:
a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer, the trench extending in a first direction;
a trench detector that acquires location information of the trench using the probe, wherein the location information includes depth information of the trench;
a controller that inserts the tip into a first point on the wafer at a location where there exists the trench based on the location information, and moves the tip in the first direction through the trench at a first inspection depth using the location information wherein the controller further moves the tip in the first direction through the trench at a second inspection depth using the location information, the second inspection depth being different from the first inspection depth; and
a defect detector that detects a defect on a sidewall of the trench at the first inspection depth as the tip is moved in the first direction through the trench.

6. A scanning probe inspector, comprising:
a probe that includes a cantilever, and a tip whose length corresponds to a depth of a trench that is formed in a wafer;
a trench detector that acquires location information of the trench using the probe, wherein the location information includes depth information of the trench; and
a controller that moves the tip through the trench at a first inspection depth using the location information wherein the controller further moves the tip through the trench at a second inspection depth using the location information, the second inspection depth being different from the first inspection depth; and
a defect detector that detects a defect on a sidewall of the trench at the first inspection depth.

7. The scanning probe inspector of claim 1 , wherein the trench detector scans a bottom and the sidewalls of the trench to acquire the location information.

8. The scanning probe inspector of claim 7 , wherein the controller prevents the tip from colliding with the sidewalls of the trench by using the location information, as the tip is moved in the first direction through the trench.

9. The scanning probe inspector of claim 1 , the trench detector acquires the location information of the trench by scanning an entire scan area of the trench.

10. The scanning probe inspector of claim 5 , wherein the controller moves the tip in the first direction through the trench at the second inspection depth, after the controller moves the tip in the first direction through the trench at the first inspection depth.

11. The scanning probe inspector of claim 5 , wherein the trench detector provides the controller with the location information, after acquiring the location information.

12. The scanning probe inspector of claim 5 , wherein the trench detector acquires the location information by scanning an entire scan area of the trench.

13. The scanning probe inspector of claim 12 , wherein the scan area is determined along an X-Y plane on the trench.

14. The scanning probe inspector of claim 5 , wherein the trench detector scans a bottom and the sidewalls of the trench to acquire the location information, and
the controller prevents the tip from colliding with the sidewalls of the trench by using the location information, as the tip is moved in the first direction through the trench.

15. The scanning probe inspector of claim 6 , wherein the trench extends in a first direction, and
the controller moves the tip in the first direction through the trench at the first inspection depth.

16. The scanning probe inspector of claim 6 , wherein the trench detector provides the controller with the location information, after acquiring the location information.

17. The scanning probe inspector of claim 6 , wherein the trench detector acquires the location information by scanning an entire scan area of the trench.

18. The scanning probe inspector of claim 6 , wherein the trench detector scans a bottom and the sidewalls of the trench to acquire the location information, and
the controller prevents the tip from colliding with the sidewalls of the trench by using the location information, as the tip is moved in the first direction through the trench.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Oh Duck Mahn
• Ryu Sung Yoon
• Sohn Young Hoon
• Jun Chung Sam
• Jee Yun Jung

Classifications

• G01Q60/16 Primary

  Probes, their manufacture, or their related instrumentation, e.g. holders · CPC title

• G02B21/002

  Scanning microscopes (scanning near field optical microscopes G01Q60/18) · CPC title

• G01Q10/06 Primary

  Circuits or algorithms therefor · CPC title

• G01Q60/30

  Scanning potential microscopy · CPC title

• G01Q80/00

  Applications, other than SPM, of scanning-probe techniques (manufacture or treatment of nanostructures B82B3/00; recording or reproducing information using near-field interaction G11B9/12, G11B11/24, G11B13/08) · CPC title