Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Patent metadata

Field	Value
Publication number	US-10584420-B2
Application number	US-201715633910-A
Country	US
Kind code	B2
Filing date	Jun 27, 2017
Priority date	Jul 1, 2016
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.

First claim

We claim:

1. A substrate liquid processing apparatus configured to perform a liquid processing on a substrate by supplying a processing liquid onto the substrate, the substrate liquid processing apparatus comprising:
a substrate holding unit configured to hold the substrate;
a processing liquid supply unit configured to supply the processing liquid onto a top surface of the substrate held by the substrate holding unit; and
a cover body configured to cover the substrate held by the substrate holding unit,
wherein the cover body comprises a ceiling unit disposed above the substrate, a sidewall unit downwardly extended from the ceiling unit, and a heating unit provided at the ceiling unit and configured to heat the processing liquid on the substrate,
the sidewall unit of the cover body is placed at an outer periphery side of the substrate when the processing liquid on the substrate is heated,
the cover body further comprises a cover body cover attached to the ceiling unit with a supporting portion therebetween and configured to cover the ceiling unit such that heat within the cover body is suppressed from being leaked.

2. The substrate liquid processing apparatus of claim 1 ,
wherein a lower end of the sidewall unit is located at a position lower than the substrate when the processing liquid on the substrate is heated.

3. The substrate liquid processing apparatus of claim 1 , further comprising:
a gap adjusting unit configured to adjust a gap between the ceiling unit and the substrate on which the processing liquid is supplied,
wherein the gap adjusting unit is configured to adjust the gap to a first gap and to a second gap larger than the first gap when the processing liquid on the substrate is heated.

4. The substrate liquid processing apparatus of claim 3 ,
wherein a lower end of the sidewall unit is located at a position lower than the substrate when the gap is set to the second gap.

5. The substrate liquid processing apparatus of claim 1 ,
wherein the ceiling unit comprises a first ceiling plate and a second ceiling plate provided on the first ceiling plate, and
the heating unit is embedded between the first ceiling plate and the second ceiling plate.

6. The substrate liquid processing apparatus of claim 1 ,
wherein the heating unit comprises an inner heating unit, an outer heating unit provided at an outer periphery side than the inner heating unit, and an intermediate heating unit provided between the inner heating unit and the outer heating unit, and
a calorific power per unit area of at least one of the inner heating unit and the outer heating unit is larger than a calorific power per unit area of the intermediate heating unit.

7. The substrate liquid processing apparatus of claim 1 ,
wherein the cover body cover is further configured to cover the sidewall unit, and
the cover body cover has higher heat insulation property than the ceiling unit and the sidewall unit.

8. The substrate liquid processing apparatus of claim 1 , further comprising:
an inert gas supply unit configured to supply an inert gas to an inside of the cover body.

9. The substrate liquid processing apparatus of claim 1 , further comprising:
a gas supply unit configured to supply a gas to a vicinity of the cover body,
wherein a supply amount of the gas from the gas supply unit at a time when the processing liquid on the substrate is heated by the heating unit is set to be smaller than a supply amount of the gas at a time when the processing liquid is supplied onto the substrate.

10. The substrate liquid processing apparatus of claim 1 ,
wherein the processing liquid supply unit comprises a processing liquid nozzle configured to discharge the processing liquid onto the substrate, and
the processing liquid nozzle is provided at the ceiling unit.

11. The substrate liquid processing apparatus of claim 1 ,
wherein the processing liquid is a plating liquid.

Assignees

• Tokyo Electron Ltd

Inventors

• Motomatsu Kazuki
• Kaneko Satoshi
• Sakamoto Kazunori

Classifications

• C23C18/18

  Pretreatment of the material to be coated · CPC title

• C23C18/42

  Coating with noble metals · CPC title

• C23C18/163 Primary

  Supporting devices for articles to be coated · CPC title

• C23C18/1676

  Heating of the solution · CPC title

• C23C18/1669

  Agitation, e.g. air introduction · CPC title