Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

Patent metadata

Field	Value
Publication number	US-10577323-B2
Application number	US-201615557747-A
Country	US
Kind code	B2
Filing date	Mar 9, 2016
Priority date	Mar 13, 2015
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A compound represented by the following formula (1).

(in formula (1), each X independently represents an oxygen atom, a sulfur atom, or non-crosslinking, each R 1 is independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, each R 2 independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one R 2 represents a group having a hydroxyl group or a thiol group, each m is independently an integer of 1 to 7, each p is independently 0 or 1, each q is independently an integer of 0 to 4, and n is 0 or 1.)

First claim

The invention claimed is:

1. A material for forming an underlayer film for lithography comprising a compound represented by the following formula (1-4):

wherein each R 1 is independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, and each q is independently an integer of 0 to 4.

2. The material for forming an underlayer film for lithography according to claim 1 , wherein the compound represented by the formula (1-4) is a compound represented by the following formula (CAX-1):

3. A composition for forming an underlayer film for lithography, comprising the material for forming an underlayer film for lithography according to claim 1 , and a solvent.

4. The composition for forming the underlayer film for lithography according to claim 3 , further comprising an acid generating agent.

5. The composition for forming the underlayer film for lithography according to claim 3 , further comprising a crosslinking agent.

6. An underlayer film for lithography, formed from the composition for forming the underlayer film for lithography according to claim 3 .

7. A resist pattern forming method comprising
step (A-1) of forming an underlayer film on a substrate by using the composition for forming the underlayer film for lithography according to claim 3 ,
step (A-2) of forming at least one photoresist layer on the underlayer film, and
step (A-3) of, after step (A-2), irradiating a predetermined region of the photoresist layer with radiation, followed by developing.

8. A circuit pattern forming method comprising
step (B-1) of forming an underlayer film on a substrate by using the composition for forming the underlayer film for lithography according to claim 3 ,
step (B-2) of forming an intermediate layer film on the underlayer film by using a silicon atom-containing resist intermediate layer film material,
step (B-3) of forming at least one photoresist layer on the intermediate layer film,
step (B-4) of, after step (B-3), irradiating a predetermined region of the photoresist layer with radiation, followed by developing to form a resist pattern, and
step (B-5) of, after step (B-4), etching the intermediate layer film with the resist pattern as a mask, etching the underlayer film with the obtained intermediate layer film pattern as an etching mask and etching the substrate with the obtained underlayer film pattern as an etching mask, to form a pattern on the substrate.

9. A method for purifying the compound used in the material for forming an underlayer film for lithography according to claim 1 , the method comprising
a step of bringing a solution comprising an organic solvent optionally immiscible with water and the compound or the resin into contact with an acidic aqueous solution for extraction.

10. The method according to claim 9 , wherein the acidic aqueous solution is an aqueous solution of at least one mineral acid selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, or an aqueous solution of at least one organic acid selected from the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid and trifluoroacetic acid.

11. The method according to claim 9 , wherein the organic solvent optionally immiscible with water is toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, 1,2-diethoxyketone, butyl acetate or ethyl acetate.

12. A resin having a structure represented by the following formula (1-4):

wherein each R 1 is independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, and each q is independently an integer of 0 to 4.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Okada Kana
• Horiuchi Junya
• Makinoshima Takashi
• Echigo Masatoshi

Classifications

• C08G61/12

  Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule · CPC title

• C07D405/04

  directly linked by a ring-member-to-ring-member bond · CPC title

• C07D209/86 Primary

  with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title