Forming underlayer film of self-assembled film including aliphatic polycyclic structure

Patent metadata

Field	Value
Publication number	US-2016222248-A1
Application number	US-201414917853-A
Country	US
Kind code	A1
Filing date	Sep 16, 2014
Priority date	Sep 19, 2013
Publication date	Aug 4, 2016
Grant date	—

Abstract

A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1):
X—Y  Formula (1)

wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound. The aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

First claim

1 . A composition for forming an underlayer film of a self-assembled film comprising a polymer having a unit structure containing an aliphatic polycyclic structure of an aliphatic polycyclic compound in a main chain.

2 . The composition for forming an underlayer film according to claim 1 , wherein
the polymer is a polymer having a unit structure containing an aliphatic polycyclic structure of an aliphatic polycyclic compound and an aromatic ring structure of an aromatic ring-containing compound in a main chain.

3 . The composition for forming an underlayer film according to claim 1 , wherein
the polymer is a polymer having a unit structure containing an aliphatic polycyclic structure of an aliphatic polycyclic compound and a polymer chain derived from a vinyl group of a vinyl group-containing compound in a main chain.

4 . The composition for forming an underlayer film according to claim 1 , wherein
the polymer has a unit structure of Formula (1):
X—Y  Formula (1)

(In Formula (1), X is a single bond, a divalent group having a vinyl structure derived from a vinyl group-containing compound as a polymer chain, or a divalent group having an aromatic ring-containing structure derived from an aromatic ring-containing compound as a polymer chain, and Y is a divalent group having an aliphatic polycyclic structure derived from an aliphatic polycyclic compound as a polymer chain).

5 . The composition for forming an underlayer film according to claim 1 , wherein
the aliphatic polycyclic compound is a bi- to hexa-cyclic diene compound.

6 . The composition for forming an underlayer film according to claim 1 , wherein
the aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

7 . The composition for forming an underlayer film according to claim 1 , wherein
the vinyl group-containing compound is alkene, acrylate, or methacrylate.

8 . The composition for forming an underlayer film according to claim 2 , wherein
the aromatic ring-containing compound is a homocyclic compound or a heterocyclic compound.

9 . The underlayer film-forming composition according to claim 8 , wherein
the homocyclic compound is benzene optionally substituted or naphthalene optionally substituted.

10 . The composition for forming an underlayer film according to claim 8 , wherein
the heterocyclic compound is carbazole optionally substituted or phenothiazine optionally substituted.

11 . The composition for forming an underlayer film according to claim 1 , further comprising a cross-linker.

12 . The composition for forming an underlayer film according to claim 1 , further comprising an acid or an acid generator.

13 . A method for forming a pattern structure comprising steps of:
applying the composition for forming an underlayer film of a self-assembled film according to claim 1 on a substrate, followed by baking, to form an underlayer film; and applying a composition for forming a self-assembled film on the underlayer film, followed by baking, to form a self-assembled film.

14 . The method for forming a pattern structure according to claim 13 , comprising a step of forming an underlying film prior to the step of applying the composition for forming an underlayer film of a self-assembled film, followed by baking, to form an underlayer film.

15 . The method for forming a pattern structure according to claim 14 , wherein the underlying film is an anti-reflective coating or a hard mask.

16 . A device having a pattern structure formed by the method for forming a pattern structure according claim 13 .

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Endo Takafumi
• Someya Yasunobu
• Wakayama Hiroyuki
• Sakamoto Rikimaru

Classifications

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C08G2261/3241

  containing one or more nitrogen atoms as the only heteroatom, e.g. carbazole · CPC title

• C08G83/008

  Supramolecular polymers · CPC title

• C08G2261/3246

  containing nitrogen and sulfur as heteroatoms · CPC title

• B05D1/38

  with intermediate treatment (intermediate treatment per se B05D3/00) · CPC title