Permanent magnet comprising a stack of ferromagnetic and antiferromagnetic layers

Patent metadata

Field	Value
Publication number	US-10535456-B2
Application number	US-201515307265-A
Country	US
Kind code	B2
Filing date	Apr 16, 2015
Priority date	Apr 28, 2014
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

A permanent magnet includes at least two antiferromagnetic layers and at least two first ferromagnetic layers. A magnetization direction of each first ferromagnetic layer is set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in the same direction as the magnetization directions of the other first ferromagnetic layers. The permanent magnet also includes at least one second ferromagnetic layer. A magnetization direction of each second ferromagnetic layer is pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers.

First claim

The invention claimed is:

1. A permanent magnet including a stack of ferromagnetic and antiferromagnetic layers, the stack comprising:
at least two antiferromagnetic layers;
at least two first ferromagnetic layers, a magnetization direction of each first ferromagnetic layer being set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in a same direction as the magnetization directions of the other first ferromagnetic layers, and
at least one second ferromagnetic layer, a magnetization direction of each second ferromagnetic layer being pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers,
wherein the magnetic moment of the permanent magnet per unit surface area (m 2 ) is greater than (50×10 −2 )/(4π) A (A is ampere).

2. The magnet as claimed in claim 1 , in which a thickness of each first ferromagnetic layer is selected so that an assembly of the first ferromagnetic layer with the antiferromagnetic layer to which the first ferromagnetic layer is linked by an exchange coupling forms a magnet of which a field H* is of a same sign as a field H ex of the magnet and of which an absolute value of the field H* is greater than 795 A/m, a field H* being a smallest intensity of magnetic field from which hysteresis of the magnet disappears, and the field H ex being the exchange field.

3. The magnet as claimed in claim 2 , in which the thickness of each first ferromagnetic layer is at least five times less than a thickness of the antiferromagnetic layer with which the first ferromagnetic layer is linked by an exchange coupling.

4. The magnet as claimed in claim 1 , in which each RKKY coupling between the second ferromagnetic layer and the one of the first ferromagnetic layers or another of the second ferromagnetic layers is systematically a ferromagnetic RKKY coupling.

5. The magnet as claimed in claim 1 , in which each RKKY coupling between the second ferromagnetic layer and the one of the first ferromagnetic layers or another second ferromagnetic layer is systematically an antiferromagnetic RKKY coupling.

6. The magnet as claimed in claim 1 , in which the stack comprises:
an end antiferromagnetic layer, this end antiferromagnetic layer being closest to a top of the stack; and
immediately below the end antiferromagnetic layer, a pattern repeated n times, immediately successively, in a stacking direction of the ferromagnetic and antiferromagnetic layers, where n is an integer greater than or equal to one, the pattern comprising in an order moving in the stacking direction:
a first antiferromagnetic layer,
a first ferromagnetic layer the magnetization direction of which is pinned by exchange coupling with the first antiferromagnetic layer,
a superimposition of p second ferromagnetic layers, the magnetization direction of the second ferromagnetic layer, located at a bottom of the superimposition, being pinned by RKKY coupling with the first ferromagnetic layer located below, and the magnetization direction of each other second ferromagnetic layer of the superimposition being pinned by RKKY coupling with the second ferromagnetic layer of the superimposition located just below, where p is a whole number greater than or equal to one, and
a first ferromagnetic layer the magnetization direction of which is pinned by exchange coupling with the first antiferromagnetic layer of the following pattern in the stack or with the end antiferromagnetic layer.

7. The magnet as claimed in claim 6 , in which p is between one and ten.

8. The magnet as claimed in claim 6 , in which p is between one and two.

9. The magnet as claimed in claim 6 , in which n is greater than or equal to two.

10. The magnet as claimed in claim 1 , in which the stack comprises a pattern repeated n times, immediately successively, in a stacking direction of the antiferromagnetic and ferromagnetic layers, where n is an integer greater than or equal to one, the pattern comprising:
an antiferromagnetic layer;
on each side of the antiferromagnetic layer:
a first ferromagnetic layer the magnetization direction of which is pinned by exchange coupling with the antiferromagnetic layer, and
a second ferromagnetic layer the magnetization direction of which is pinned by RKKY coupling with the first ferromagnetic layer; and

a lamination layer made of a non-magnetic material located at one end of the pattern for magnetically isolating the pattern from the immediately following or preceding pattern in the same stack.

11. The magnet as claimed in claim 10 , in which n is greater than or equal to two.

12. The magnet as claimed in claim 1 , in which the magnet exhibits a form factor greater than or equal to two, the form factor being defined as a ratio of a length over a width of a parallelepiped of smallest volume fully containing the stack and the magnetization direction of each ferromagnetic layer of the permanent magnet being pinned in a direction parallel to the length of the parallelepiped.

13. The magnet as claimed in claim 1 , in which, for all pairs of ferromagnetic layers of the stack, one of the selected relationships in a group consisting of the relationships M 1 t 1 ≥5*M 2 t 2 and M 2 t 2 ≥5*M 1 t 1 , is satisfied, where:
M 1 and t 1 are, respectively, a magnetization and a thickness of the first ferromagnetic layer of the pair, and
M 2 and t 2 are, respectively, a magnetization and a thickness of the second ferromagnetic layer of the same pair,
each pair of ferromagnetic layers of the stack comprising the second ferromagnetic layer and the first ferromagnetic layer which pins, only by RKKY coupling, the magnetization direction of the second ferromagnetic layer.

14. A magnetic field sensor comprising:
a substrate extending essentially in a plane termed a “plan of the substrate;”
at least one permanent magnet movable with respect to the substrate in response to a variation in an amplitude or direction of a magnetic field to be measured;
a transducer attached onto the substrate, to convert a movement of the permanent magnet into an electrical value representative of the amplitude or direction of the magnetic field to be measured,
wherein the permanent magnet is the permanent magnet according to claim 1 .

15. A method for manufacturing the permanent magnet according to claim 1 , the method comprising:
forming a stack of first ferromagnetic and antiferromagnetic layers;
heating the stack so as to reach a temperature higher than an ordering temperature for a material of magnetic layers of the stack;
applying, when the temperature is higher than the ordering temperature, a first magnetic field for aligning a magnetization direction of the ferromagnetic layers along a predetermined desired direction; and
cooling the stack in the presence of a second magnetic field less than the first magnetic field to make an exchange coupling appear between each first ferromagnetic layer and an antiferromagnetic layer of the same stack,
wherein the forming comprises the formation, in the stack, of second ferromagnetic layers separated from the first ferromagnetic layers and other second ferromagnetic layers by non-magnetic layers the thickness of which configured to enable an appearance of an RKKY coupling between the second ferromagnetic layer and the first ferromagnetic layer or the other second ferromagnetic layer so as to pin a magnetic direction of the second ferromagnetic layer only by the RKKY coupling with one of the first ferromagnetic layers or with at least one of the other second ferromag

Assignees

• Commissariat Energie Atomique

Inventors

• Delaet Bertrand
• Cartier Mathilde
• Cyrille Marie-Claire

Classifications

• H01F41/30

  for applying nanostructures, e.g. by molecular beam epitaxy [MBE] · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3218

  Exchange coupling of magnetic films via an antiferromagnetic interface (H01F10/3268 takes precedence) · CPC title

• G01R33/0286 Primary

  comprising microelectromechanical systems [MEMS] (MEMS devices in general B81B) · CPC title

• H01F41/0253

  for manufacturing permanent magnets · CPC title