Imaging apparatus

Patent metadata

Field	Value
Publication number	US-10522582-B2
Application number	US-201615761475-A
Country	US
Kind code	B2
Filing date	Sep 21, 2016
Priority date	Oct 5, 2015
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved. The imaging apparatus includes: a light-receiving element array in which a plurality of light-receiving elements including a compound semiconductor having light-receiving sensitivity in an infrared range are arrayed; a signal processing circuit that processes a signal from the light-receiving element; an upper electrode formed on a light-receiving surface side of the light-receiving element; and a lower electrode that is paired with the upper electrode, in which the light-receiving element array and the signal processing circuit are joined to each other with a film of a predetermined material, the upper electrode and the signal processing circuit are connected to each other through a through-via-hole penetrating a part of the light-receiving element, and the lower electrode is made as an electrode common to the light-receiving elements arrayed in the light-receiving element array. The present technology can be applied to an infrared sensor.

First claim

The invention claimed is:

1. An imaging apparatus, comprising:
a light-receiving element array that comprises a plurality of light-receiving elements, wherein each of the plurality of light-receiving elements includes a compound semiconductor having light-receiving sensitivity in an infrared range;
a signal processing circuit configured to process a signal from the plurality of the light-receiving elements;
an upper electrode on a light-receiving surface side of the plurality of light-receiving elements;
a first lower electrode paired with the upper electrode, wherein
the light-receiving element array and the signal processing circuit are joined to each other with a film of a specific material,
the upper electrode and the signal processing circuit are connected to each other through a first through-via-hole penetrating a part of a light-receiving element of the plurality of light-receiving elements, and
the first lower electrode is common to each of the plurality of light-receiving elements in the light-receiving element array; and

a fixed-charge film that covers an interior of the first through-via-hole.

2. The imaging apparatus according to claim 1 , wherein the compound semiconductor is a group III-V semiconductor compound.

3. The imaging apparatus according to claim 1 , further comprising a second lower electrode in a lower portion of the light-receiving element of the plurality of light-receiving elements, wherein
the first lower electrode and the second lower electrode are connected to each other through a second through-via-hole, and
the second through-via-hole penetrates to the second lower electrode.

4. The imaging apparatus according to claim 1 , further comprising a second lower electrode in a lower portion of the light-receiving element of the plurality of light-receiving elements,
wherein the first lower electrode is, at an outer peripheral portion of the light-receiving element array, connected to the second lower electrode.

5. The imaging apparatus according to claim 1 , wherein the first lower electrode is connected to the signal processing circuit at an outer peripheral portion of the light-receiving element array.

6. The imaging apparatus according to claim 1 , wherein a part of the upper electrode is on the fixed-charge film.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Maruyama Shunsuke
• Yanagita Takeshi

Classifications

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• G01J5/24

  Use of specially adapted circuits, e.g. bridge circuits · CPC title