Semiconductor device

Patent metadata

Field	Value
Publication number	US-9954111-B2
Application number	US-201514659656-A
Country	US
Kind code	B2
Filing date	Mar 17, 2015
Priority date	Mar 18, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first transistor, the first transistor comprising:
a first semiconductor;
a first insulator; and
a first conductor;

a second insulator over the first transistor, wherein the second insulator is provided over the first conductor;
a second transistor over the second insulator, the second transistor comprising:
a second semiconductor;
a third insulator; and
a second conductor;

a fourth insulator over the second transistor; and
a capacitor over the fourth insulator, the capacitor comprising:
a first part of a third conductor;
a fourth conductor; and
a fifth insulator,

wherein a part of the first conductor overlaps with the first semiconductor with the first insulator interposed therebetween,
wherein a part of the second conductor overlaps with the second semiconductor with the third insulator interposed therebetween,
wherein the first part of the third conductor faces the fourth conductor with the fifth insulator interposed therebetween,
wherein the third conductor is electrically connected to the first conductor through a first opening in the second insulator and a second opening in the fourth insulator,
wherein the third conductor is electrically connected to the second semiconductor through the second opening in the fourth insulator,
wherein a second part of the third conductor is provided in the second opening, wherein the second part of the third conductor includes the same material as that included in the first part of the third conductor, and
wherein a third part of the third conductor is provided in the first opening.

2. The semiconductor device according to claim 1 , wherein the fifth insulator comprises an element included in the fourth conductor.

3. The semiconductor device according to claim 1 , wherein the first semiconductor comprises silicon.

4. The semiconductor device according to claim 1 , wherein the second semiconductor comprises indium.

5. The semiconductor device according to claim 1 , wherein the first semiconductor is a part of a semiconductor substrate.

6. The semiconductor device according to claim 1 , wherein the first semiconductor has a projection provided on a semiconductor substrate.

7. The semiconductor device according to claim 1 ,
wherein a direction of the third conductor is substantially perpendicular to the second semiconductor.

8. The semiconductor device according to claim 1 , wherein the first part of the third conductor includes the same material as that included in the third part of the third conductor.

9. A semiconductor device comprising:
a first transistor;
a first insulator over the first transistor;
a second transistor over the first insulator;
a second insulator over the second transistor; and
a capacitor comprising a first part of a third conductor,
wherein the third conductor is electrically connected to a gate electrode of the first transistor and one of a source electrode and a drain electrode of the second transistor,
wherein a second part of the third conductor is provided in an opening of the first insulator, and
wherein a third part of the third conductor is provided in an opening of the second insulator.

10. The semiconductor device according to claim 9 , wherein the capacitor is located over the second insulator.

11. The semiconductor device according to claim 9 , wherein the capacitor is located over the first insulator and under the second transistor.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Suzawa Hideomi

Classifications

• H01L29/7869 Primary

  Electricity · mapped topic

• H01L27/0688

  Electricity · mapped topic

• H01L27/0629

  Electricity · mapped topic

• H01L29/0657

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic