Bonded structures

Patent metadata

Field	Value
Publication number	US-10522499-B2
Application number	US-201715849383-A
Country	US
Kind code	B2
Filing date	Dec 20, 2017
Priority date	Feb 9, 2017
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

First claim

What is claimed is:

1. A bonded structure comprising:
a first element having a first interface feature comprising a first conductive feature and a first non-conductive feature;
a second element having a second interface feature comprising a second conductive feature and a second non-conductive feature, the first conductive feature of the first interface feature directly bonded to the second conductive feature of the second interface feature without an intervening adhesive, and the first non-conductive feature of the first interface feature directly bonded to the second non-conductive feature of the second interface feature without an intervening adhesive, to define an interface structure;
a conductive trace disposed in or on the second element;
a bond pad at an upper surface of the first element and in electrical communication with the conductive trace; and
an integrated device coupled to or formed with the first element or the second element,
wherein a bonded interface between the first conductive feature and the second conductive feature substantially surrounds an interior region of the bonded structure.

2. The bonded structure of claim 1 , further comprising a cavity between the first and second elements.

3. The bonded structure of claim 1 , wherein no cavity is disposed in the bonded structure.

4. The bonded structure of claim 1 , wherein the bonded interface between the first conductive feature and the second conductive feature is configured to define an effectively closed profile to connect the first and second elements, the effectively closed profile substantially sealing the interior region of the bonded structure from gases diffusing into the interior region from the outside environs.

5. The bonded structure of claim 1 , further comprising an electrical interconnect extending from the conductive trace through the interface structure to connect to the bond pad.

6. The bonded structure of claim 1 , wherein one or both of the first and second non-conductive features comprises silicon oxide.

7. The bonded structure of claim 1 , further comprising a plurality of bond pads disposed at the upper surface of the first element.

8. The bonded structure of claim 1 , wherein the integrated device is electrically connected to the conductive trace.

9. The bonded structure of claim 1 , wherein the bond pad is recessed relative to an uppermost surface of the bonded structure.

10. The bonded structure of claim 1 , wherein a lateral area of the second element is larger than a lateral area of the first element.

11. The bonded structure of claim 1 , wherein the first conductive feature comprises multiple conductive segments.

12. The bonded structure of claim 1 , wherein the multiple conductive segments comprises an array of conductive dots.

13. The bonded structure of claim 2 , wherein the integrated device is disposed in the cavity.

14. The bonded structure of claim 4 , wherein the bonded interface between the first conductive feature and the second conductive feature comprises an incomplete annular pattern.

15. The bonded structure of claim 5 , wherein the electrical interconnect extends through the first element.

16. The bonded structure of claim 5 , wherein the electrical interconnect extends through at least a portion of the second element.

17. The bonded structure of claim 15 , wherein the first interface feature is disposed on a lower surface of the first element opposite the upper surface of the first element.

18. A bonded structure comprising:
a first element having a first interface feature comprising a first conductive feature and a first non-conductive feature;
a second element having a second interface feature comprising a second conductive feature and a second non-conductive feature, the first conductive feature of the first interface feature directly bonded to the second conductive feature of the second interface feature without an intervening adhesive, and the first non-conductive feature of the first interface feature directly bonded to the second non-conductive feature of the second interface feature without an intervening adhesive, to define an interface structure;
a bond pad at an upper surface of the first element;
an integrated device coupled to or formed with the first element or the second element; and
an electrical interconnect extending from the bond pad through the first element to electrically connect to the integrated device,
wherein a bonded interface between the first conductive feature and the second conductive feature substantially surrounds an interior region of the bonded structure.

19. The bonded structure of claim 18 , wherein the electrical interconnect extends through the interface structure.

20. The bonded structure of claim 18 , further comprising a conductive trace in or on the second element, the conductive trace providing electrical communication between the integrated device and the electrical interconnect.

21. The bonded structure of claim 18 , further comprising a cavity between the first and second elements.

22. The bonded structure of claim 18 , wherein the interface structure is disposed around the integrated device to define an effectively closed profile to connect the first and second elements, the effectively closed profile substantially sealing an interior region of the bonded structure from gases diffusing into the interior region from the outside environs.

23. The bonded structure of claim 19 , wherein the electrical interconnect extends through a portion of the second element.

24. A method of forming a bonded structure, the method comprising:
providing a first element having a first interface feature comprising a first conductive feature and a first non-conductive feature and a second element having a second interface feature comprising a second conductive feature and a second non-conductive feature, a conductive trace being disposed in or on the second element;
directly bonding the first conductive feature of the first interface feature and the second conductive feature of the second interface feature without an intervening adhesive; and
directly bonding the first non-conductive feature of the first interface feature and the second non-conductive feature of the second interface feature without an intervening adhesive,
wherein a bond pad is disposed at an upper surface of the first element and in electrical communication with the conductive trace, wherein an integrated device is coupled to or formed with the first element or the second element, and wherein a bonded interface between the first conductive feature and the second conductive feature substantially surrounds an interior region of the bonded structure.

25. The method of claim 24 , further comprising providing an electrical interconnect extending from the bond pad through the first element to electrically connect to the conductive trace.

26. The method of claim 24 , wherein the first interface feature is disposed on the upper surface of the first element, and the bond pad is disposed outside the effectively closed profile.

27. The method of claim 25 , further comprising providing the electrical interconnect before the bonding.

28. The method of claim 25 , further comprising providing the electrical interconnect after the bonding.

Assignees

• Invensas Bonding Tech Inc

Inventors

• Enquist Paul M
• Wang Liang
• Katkar Rajesh
• Delacruz Javier A
• Sitaram Arkalgud R

Classifications

• B81C2203/038

  Bonding techniques not provided for in B81C2203/031 - B81C2203/037 · CPC title

• H10W90/792

  between multiple chips · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title