In-situ plasma cleaning of process chamber components

Patent metadata

Field	Value
Publication number	US-10522330-B2
Application number	US-201514820747-A
Country	US
Kind code	B2
Filing date	Aug 7, 2015
Priority date	Jun 12, 2015
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

First claim

The invention claimed is:

1. An ion implantation system, comprising:
a component within a chamber of the ion implantation system, wherein the component is an electrostatic filter including a plurality of conductive beam optics disposed about an ion beam-line; and
a power supply in communication with the component, the power supply supplying a first voltage and a first current to the component during a processing mode and a second voltage and a second current to the component during a cleaning mode, wherein the first voltage and the first current are independently applied to each of the plurality of conductive beam optics of the component, wherein the component includes an electrode grid, extending parallel to, and disposed above and below, the ion beam, directly adjacent the conductive beam optics and a housing of the electrostatic filter, the electrode grid receiving the second voltage during the cleaning mode to generate a plasma around one or more of the conductive beam optics, wherein the electrode grid is grounded during the processing mode and supplied the second voltage during the cleaning mode, wherein the plurality of conductive beam optics is at zero volts during the cleaning mode, and
wherein an etchant gas is supplied to the component to enable cleaning of the plurality of conductive beam optics.

2. The ion implantation system of claim 1 , further comprising a gas inlet for supplying the etchant gas to the chamber.

3. The ion implantation system of claim 1 , further comprising a flow controller for adjusting an injection rate of the etchant gas.

4. The ion implantation system of claim 1 , further comprising a vacuum pump for adjusting a pressure of the chamber.

5. The ion implantation system of claim 1 , the second voltage and the second current supplied from one of the following: a direct current (DC) power supply, and a radio frequency (RF) power supply.

6. A system, comprising:
an electrostatic filter including a chamber for generation of a plasma, wherein the electrostatic filter comprises:
a plurality of conductive beam optics disposed along an ion beam-line; and
an electrode grid extending directly adjacent the plurality of conductive beam optics and a housing of the electrostatic filter, the electrode grid disposed above and below the ion beam-line;

a power supply in communication with the electrostatic filter, the power supply supplying a first voltage and a first current to the electrostatic filter during a processing mode and a second voltage and a second voltage and a second current to the electrostatic filter during a cleaning mode, wherein the first voltage and the first current are independently applied to each of the plurality of conductive beam optics of the electrostatic filter wherein the electrode grid receives the second voltage and the second current during the cleaning mode to generate a plasma around one or more of the plurality of conductive beam optics, wherein the electrode grid is grounded during the processing mode and supplied the second voltage during the cleaning mode, and wherein the plurality of conductive beam optics is at zero volts during the cleaning mode; and
a flow controller for adjusting an injection rate of an etchant gas supplied to the electrostatic filter during the cleaning mode.

7. The system of claim 6 , wherein the plurality of conductive beam optics comprises a plurality of electrode rods.

8. The system of claim 6 , the first voltage and the first current supplied by a direct current (DC) power supply, and the second voltage and the second current supplied by a DC power supply or a radio frequency (RF) power supply.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Anglin Kevin
• Lee William Davis
• Kurunczi Peter
• Downey Ryan
• Scheuer Jay T
• Likhanskii Alexandre
• Holber William M

Classifications

• H01J2237/049

  Focusing means · CPC title

• H01J2237/04756

  with electrostatic means · CPC title

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J2237/057

  Energy or mass filtering · CPC title

• H01J2237/022

  Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title