Lithography techniques for reducing resist swelling

Patent metadata

Field	Value
Publication number	US-10520822-B2
Application number	US-201715639033-A
Country	US
Kind code	B2
Filing date	Jun 30, 2017
Priority date	Jun 30, 2017
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

The present disclosure provides lithography resist materials and corresponding lithography techniques for improving lithography resolution, in particular, by reducing swelling of resist layers during development. An exemplary lithography method includes performing a treatment process on a resist layer to cause cross-linking of acid labile group components of the resist layer via cross-linkable functional components, performing an exposure process on the resist layer, and performing a development process on the resist layer. In some implementations, the resist layer includes an exposed portion and an unexposed portion after the exposure process, and the treatment process reduces solubility of the unexposed portion to a developer used during the development process by increasing a molecular weight of a polymer in the unexposed portion. The treatment process is performed before or after the exposure process. The treatment process can include performing a thermal treatment and/or an electromagnetic wave treatment to heat the resist layer.

First claim

What is claimed is:

1. A lithography method comprising:
performing a treatment process on a resist layer to cause cross-linking of acid labile group (ALG) components, wherein the ALG components are cross-linked to one another by cross-linkable functional components;
performing an exposure process on the resist layer; and
performing a development process on the resist layer, thereby forming a patterned resist layer over a workpiece.

2. The lithography method of claim 1 , wherein the resist layer includes an exposed portion and an unexposed portion after the exposure process, and further wherein the treatment process reduces solubility of the unexposed portion to a developer used during the development process by increasing a molecular weight of a polymer in the unexposed portion.

3. The lithography method of claim 2 , wherein the developer removes the exposed portion.

4. The lithography method of claim 1 , wherein the treatment process is performed before performing the exposure process.

5. The lithography method of claim 1 , wherein the treatment process is performed after performing the exposure process.

6. The lithography method of claim 1 , further comprising performing a post exposure baking (PEB) process on the resist layer, wherein the resist layer is treated after performing the PEB process, and further wherein the PEB process is performed at a lower temperature than the treatment process.

7. The lithography method of claim 1 , wherein the treatment process includes performing a thermal treatment to heat the resist layer.

8. The lithography method of claim 1 , wherein the treatment process includes performing an electromagnetic wave treatment to heat the resist layer.

9. The lithography method of claim 1 , wherein the resist layer includes a first portion and a second portion, and further wherein the treatment process causes a molecular weight of a polymer of the resist layer in the first portion to be greater than a molecular weight of the polymer of the resist layer in the second portion.

10. The lithography method of claim 1 , wherein the resist layer further includes cross-linkers, and the cross-linkable functional components are cross-linked via the cross-linkers.

11. A lithography method comprising:
exposing a resist layer to patterned radiation, wherein the resist layer includes an exposed portion and an unexposed portion;
baking the resist layer;
treating the resist layer to induce cross-linking of acid labile group (ALG) components, wherein the ALG components are cross-linked to one another by cross-linkable functional components in the unexposed portion; and
developing the resist layer to remove the exposed portion, thereby forming a patterned resist layer.

12. The lithography method of claim 11 , wherein the resist layer is treated after baking the resist layer.

13. The lithography method of claim 11 , wherein the treating is performed at a first temperature, and the baking is performed at a second temperature, wherein the first temperature is higher than the second temperature.

14. The lithography method of claim 11 , wherein the treating includes performing a thermal treatment to heat the resist layer.

15. The lithography method of claim 11 , wherein the treating includes performing an electromagnetic wave treatment to heat the resist layer.

16. The lithography method of claim 11 , wherein the resist layer further includes cross-linkers, and the cross-linkable functional components are cross-linked via the cross-linkers.

17. A lithography method comprising:
forming a resist layer over a workpiece, wherein the resist layer includes polymers, photoacid generator (PAG) components that generate acid in response to radiation, acid labile group (ALG) components that cleave from the polymers in response to acid generated by the PAG components, and cross-linkable functional components;
performing a treatment process on the resist layer such that the ALG components are cross-linked to one another by the cross-linkable functional components and the cross-linkable functional components are cross-linked to one another by cross-linkers;
performing an exposure process on the resist layer, wherein the exposure process causes the PAG components to generate the acid; and
performing a development process on the resist layer.

18. The lithography method of claim 17 , wherein the resist layer includes a first portion and a second portion, and further wherein the treatment process causes a molecular weight of the polymers of the resist layer in the first portion to be greater than a molecular weight of the polymers of the resist layer in the second portion.

19. The lithography method of claim 17 , wherein the treatment process is performed after a pre-exposure baking process.

20. The lithography method of claim 19 , wherein the treatment process is performed at a first temperature, and the pre-exposure baking process is performed at a second temperature, wherein the first temperature is higher than the second temperature.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Weng Ming-Hui
• Wu Cheng-Han
• Chang Ching-Yu
• Lin Chin-Hsiang

Classifications

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F1/56 Primary

  Organic absorbers, e.g. of photo-resists · CPC title

• G03F7/40 Primary

  Treatment after imagewise removal, e.g. baking · CPC title