Film forming apparatus

Patent metadata

Field	Value
Publication number	US-10519548-B2
Application number	US-201615272503-A
Country	US
Kind code	B2
Filing date	Sep 22, 2016
Priority date	Sep 28, 2015
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

A film forming apparatus includes: process container to generate vacuum atmosphere; mounting part to mount substrate; heating part to heat the substrate mounted on the mounting part; gas supply part installed at rear side of the substrate mounted on the mounting part and configured to supply film forming gas toward front side of the substrate along surface of the substrate and flow rate of the film forming gas becomes uniform in width direction of flow of the film forming gas; rotation mechanism to rotate the mounting part about axis orthogonal to the substrate when the film forming gas is supplied to the substrate; film thickness adjustment part to adjust film thickness distribution of film on the substrate in flow direction of the film forming gas when viewed in state where the mounting part is stopped; and exhaust port provided at the front side of the substrate.

First claim

What is claimed is:

1. A film forming apparatus, comprising:
a process container configured to generate a vacuum atmosphere;
a mounting part provided within the process container, and configured to mount a substrate;
a heating part configured to heat an opposite side from a mounting surface of the mounting part to heat the substrate mounted on the mounting part;
a gas supply part installed at a rear side of the substrate mounted on the mounting part, and configured to supply a film forming gas so that the film forming gas flows toward a front side of the substrate along a surface of the substrate over the entire surface of the substrate and so that a flow rate of the film forming gas becomes uniform in a width direction of a flow of the film forming gas;
a rotation mechanism configured to rotate the mounting part about an axis orthogonal to the substrate when the film forming gas is supplied to the substrate;
a film thickness adjustment part configured to adjust a film thickness distribution of a film on the substrate in a flow direction of the film forming gas when viewed in a state in which the mounting part is stopped; and
an exhaust port provided at the front side of the substrate,
wherein the film thickness adjustment part is a concentration adjustment gas supply part provided to face the substrate and configured to supply a concentration adjustment gas to the flow of the film forming gas in order to adjust a concentration distribution of the film forming gas in the flow direction of the film forming gas, wherein the concentration adjustment gas supply part is further configured to extend in a width direction of the flow of the film forming gas, the concentration adjustment gas supply part including a plurality of gas injection ports arranged in the flow direction of the film forming gas to inject a dilution gas as the concentration adjustment gas,
wherein each of the plurality of gas injection ports includes a supply path obliquely formed toward the front side of the substrate and having a slit shape extending in the width direction by a length more than a size of the substrate, and a tube-shaped buffer chamber communicating with the supply path and extending in the width direction, to assist the dilution gas to be injected at a uniform rate in the width direction, and
wherein the plurality of gas injection ports is configured to inject the dilution gas at the uniform rate in the width direction and to be able to inject the dilution gas at different rates in the flow direction.

Assignees

• Tokyo Electron Ltd

Inventors

• Noro Naotaka

Classifications

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/45534 Primary

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title