Etchant composition, method for etching multilayered film, and method for preparing display device

Patent metadata

Field	Value
Publication number	US-10501853-B2
Application number	US-201515518130-A
Country	US
Kind code	B2
Filing date	Oct 7, 2015
Priority date	Oct 10, 2014
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

First claim

The invention claimed is:

1. An etchant composition, comprising:
(A) a copper ion source;
(B) a source of an organic acid ion having one or more carboxyl groups in a molecule;
(C) a fluoride ion source;
(D) an etching controller, a surface oxidizing power enhancer, or a combination thereof, as a first additive; and
(E) a surfactant, as a second additive,
wherein the etchant composition has a pH value of 3 or less.

2. The etchant composition of claim 1 , wherein, in the etchant composition, the contents of (A) to (E) are 0.02 mol/kg to 1.0 mol/kg of (A) the copper ion source; 0.01 mol/kg to 3.0 mol/kg of (B) the source of an organic acid ion having one or more carboxyl groups in a molecule; 0.01 mol/kg to 1.0 mol/kg of (C) the fluoride ion source; 0.01 mol/kg to 3.0 mol/kg of (D) the first additive; and 1.0 ppm to 30,000 ppm of (E) the second additive.

3. The etchant composition of claim 1 , wherein (A) the copper ion source is at least one selected from the group consisting of copper, copper sulfate, copper nitrate, copper chloride, copper fluoride, copper phosphide, copper hydroxide, copper acetate, copper citrate, copper lactate, copper oleate, a copper silicon compound, copper bromide, and copper carbonate.

4. The etchant composition of claim 1 , wherein (B) the source of an organic acid ion having one or more carboxyl groups in a molecule is at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, caproic acid, caprylic acid, capric acid, lauric acid, stearic acid, gluconic acid, citric acid, tartaric acid, malic acid, succinic acid, oxalic acid, maleic acid, and an ammonium salt thereof.

5. The etchant composition of claim 1 , wherein a mixing ratio of (B) the source of an organic acid ion with respect to (A) the copper ion source is 0.01 to 150.0 times on a molar basis.

6. The etchant composition of claim 1 , wherein (C) the fluoride ion source is at least one selected from the group consisting of hydrofluoric acid, ammonium fluoride, acid ammonium fluoride, potassium fluoride, ammonium fluoroborate, potassium bisulfite, potassium borofluoride, sodium fluoride, sodium bisulfite, aluminum fluoride, boron fluoride, lithium fluoride, calcium fluoride, and copper fluoride.

7. The etchant composition of claim 1 , wherein a mixing ratio of (C) the fluoride ion source with respect to (A) the copper ion source is 0.01 to 50.0 times on a molar basis.

8. The etchant composition of claim 1 , wherein (D) the etching controller, as a first additive, is a halogen ion source, except for a fluorine ion.

9. The etchant composition of claim 8 , wherein the halogen ion source, except for the fluorine ion, is at least one selected from the group consisting of hydrochloric acid, potassium chloride, sodium chloride, ammonium chloride, bromic acid, potassium bromide, sodium bromide, ammonium bromide, iodic acid, potassium iodide, sodium iodide, and ammonium iodide.

10. The etchant composition of claim 1 , wherein (D) the surface oxidizing power enhancer, as a first additive, is an inorganic acid.

11. The etchant composition of claim 10 , wherein the inorganic acid is at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, and hydrochloric acid.

12. The etchant composition of claim 1 , wherein a mixing ratio of (D) the first additive with respect to (A) the copper ion source is 0.01 to 150.0 times on a molar basis.

13. The etchant composition of claim 1 , wherein (E) the surfactant, as a second additive, is a nonionic surfactant.

14. The etchant composition of claim 13 , wherein the nonionic surfactant is at least one selected from the group consisting of polyethyleneglycol, polypropyleneglycol, polyetherpolyol, polyglycololeicacid, gelatin, and an ethylene oxide (EO)-propylene oxide (PO) copolymer.

15. The etchant composition of claim 1 , wherein the etchant composition further comprises (F) an alkali metal salt, as a third additive.

16. The etchant composition of claim 15 , wherein (F) the alkali metal salt, as a third additive, is at least one selected from the group consisting of an alkali metal salt containing halogen, an alkali metal salt of an organic acid having one or more carboxyl groups in a molecule, and an alkali metal salt of a strong alkali.

17. The etchant composition of claim 15 , wherein, in the etchant composition, the content of (F) the third additive is 0.01 mol/kg to 2.0 mol/kg.

18. The etchant composition of claim 15 , wherein a mixing ratio of (F) the third additive with respect to (A) the copper ion source is 0.01 to 100.0 times on a molar basis.

19. The etchant composition of claim 1 , wherein the etchant composition is provided for etching a multilayered film containing copper and titanium.

Assignees

• Samyoung Pure Chemicals Co Ltd
• Mitsubishi Gas Chemical Co
• Samsung Display Co Ltd

Inventors

• Jeon Jung-Ig
• Ihn Chi-Sung
• Lee Mi-Soon
• Shin Hyun-Eok
• Bae Joon-Woo

Classifications

• H10P50/667

  by liquid etching only · CPC title

• C23F1/18 Primary

  for etching copper or alloys thereof · CPC title

• C23F1/16 Primary

  Acidic compositions (C23F1/42 takes precedence) · CPC title

• C23F1/30

  for etching other metallic material · CPC title

• C23F1/26

  for etching refractory metals · CPC title