Ionic floating-gate memory device

Patent metadata

Field	Value
Publication number	US-10497866-B1
Application number	US-201816012430-A
Country	US
Kind code	B1
Filing date	Jun 19, 2018
Priority date	Jun 19, 2018
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.

First claim

What is claimed is:

1. A non-volatile memory device comprising:
a threshold switch; and
a redox transistor that is electrically coupled to the switch, wherein the redox transistor comprises:
a gate electrode that is coupled to the switch;
a source electrode;
a drain electrode; and
a channel between the source electrode and the drain electrode, wherein the channel comprises a storage element composed of a material, the storage element is configured to emit and accept ions as a function of current that enters the gate electrode, and further wherein a state of the non-volatile memory device is a function of a redox state of the channel electrode.

2. The non-volatile memory device of claim 1 , wherein the ions are hydrogen ions.

3. The non-volatile memory device of claim 1 , wherein the switch is a diffusive memristor.

4. The non-volatile memory device of claim 3 , wherein the diffusive memristor comprises a Pt/Ag/SiO x N y /Ag/Pt stack.

5. The non-volatile memory device of claim 1 , further comprising:
a second storage element coupled to the gate electrode, wherein the second storage element is composed of the material; and
a solid electrolyte that is positioned between the storage element and the second storage element.

6. The non-volatile memory device of claim 5 , the material being an organic polymer.

7. The non-volatile memory device of claim 6 , wherein the organic polymer comprises poly(3,4-ethylenedioxythiophene) polystyrene sulfonate.

8. The non-volatile memory device of claim 5 , the material being a transition metal oxide.

9. The non-volatile memory device of claim 5 , wherein the material comprises at least one of MoO 3 , MoS 2 , graphene, WO 3 , TiO 2 , or LiTiO 2 .

10. The non-volatile memory device of claim 8 , wherein the electrolyte comprises Nafion.

11. The non-volatile memory device of claim 1 , wherein the threshold switch is one of a transistor, a vertical Si transistor, a Si PN diode, a Si Punchthrough diode, an Oxide PN diode, an Oxide/Nitride Schottky barrier, a varistor-type bidirectional switch, a chalcogenide threshold switch, a metal insulator metal switch, a threshold vacuum switch, or a mixed ionic electronic selector (MIEC).

12. The non-volatile memory device of claim 1 , wherein the state of the non-volatile memory is configured to be altered in response to a voltage of between 0.2V and 1V being applied to the switch.

13. The non-volatile memory device of claim 1 , wherein the non-volatile memory device is included in an array of identical non-volatile memory devices, and further wherein a hardware artificial neural network comprises the array of identical non-volatile memory devices.

Assignees

• Nat Tech & Eng Solutions Sandia Llc

Inventors

• Fuller Elliot James
• Agarwal Sapan
• Talin Albert Alec

Classifications

• G11C2213/53

  Structure wherein the resistive material being in a transistor, e.g. gate · CPC title

• G11C2013/0092

  Write characterized by the shape, e.g. form, length, amplitude of the write pulse · CPC title

• G11C2213/79

  Array wherein the access device being a transistor · CPC title

• G11C2013/0073

  Write using bi-directional cell biasing · CPC title

• G11C2213/74

  Array wherein each memory cell has more than one access device · CPC title