Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors

Patent metadata

Field	Value
Publication number	US-10392243-B2
Application number	US-201515516322-A
Country	US
Kind code	B2
Filing date	Oct 1, 2015
Priority date	Oct 2, 2014
Publication date	Aug 27, 2019
Grant date	Aug 27, 2019

Abstract

A MEMS apparatus with dynamic displacement control includes a MEMS parallel plate capacitor integrated with one or more memristors in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance. The current is limited by said MEMS parallel plate capacitor restricting a change in the resistance of the memristor(s). The memristor(s) can be employed in some embodiments a sensor element to improve a MEMS operation range.

First claim

The invention claimed is:

1. A MEMS apparatus with dynamic displacement control, said apparatus comprising:
a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;
a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;
a first summation circuit that receives input from the correlation circuit and a signal builder;
a speed estimator circuit that receives input from the correlation circuit;
a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;
wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor; and
wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range.

2. The apparatus of claim 1 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

3. The apparatus of claim 1 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

4. The apparatus of claim 1 wherein further comprising at least one amplification stage that maximizes a charge interaction.

5. The apparatus of claim 4 wherein said at least one amplification stage comprises a BJT amplification.

6. The apparatus of claim 4 wherein said at least one amplification stage comprises via a MOSFET amplification.

7. The apparatus of claim 4 wherein said at least one amplification stage comprises an Op Amp stage.

8. The apparatus of claim 1 wherein said at least one memristor is employable as said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

9. A MEMS apparatus with dynamic displacement control, said apparatus comprising:
a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;
a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;
a first summation circuit that receives input from the correlation circuit and a signal builder;
a speed estimator circuit that receives input from the correlation circuit;
a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;
at least one amplification stage of said apparatus that maximizes a charge interaction;
wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor; and
wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range.

10. The apparatus of claim 9 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

11. The apparatus of claim 9 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

12. The apparatus of claim 9 wherein said at least one amplification stage comprises a BJT amplification.

13. The apparatus of claim 9 wherein said at least one amplification stage comprises via a MOSFET amplification.

14. The apparatus of claim 9 wherein said at least one amplification stage comprises an Op Amp stage.

15. The apparatus of claim 9 wherein said at least one memristor is employable as said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

16. A MEMS apparatus with dynamic displacement control, said apparatus comprising:
a MEMS parallel plate capacitor integrated with at least one memristor in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance;
a correlation circuit that receives input from the memristor, wherein the correlation circuit represents a polynomial equation that correlates with MEMS displacement;
a first summation circuit that receives input from the correlation circuit and a signal builder;
a speed estimator circuit that receives input from the correlation circuit;
a second summation circuit that receives input from the first summation circuit and the speed estimator circuit and provides an input to the MEMS parallel plate capacitor;
at least one amplification stage of said apparatus that maximizes a charge interaction;
wherein a current in said apparatus is limited by said MEMS parallel plate capacitor restricting a change in a resistance of said at least one memristor;
wherein said at least one memristor is employable as a sensor element to improve a MEMS operation range; and
wherein said at least one memristor comprises said sensor element for a MEMS displacement for voltage close-loop control to improve said MEMS operation range.

17. The apparatus of claim 16 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS sensor.

18. The apparatus of claim 16 wherein said MEMS parallel plate capacitor and said at least one memristor is employed as a part of a MEMS actuator.

19. The apparatus of claim 16 wherein said at least one amplification stage comprises a BJT amplification.

20. The apparatus of claim 16 wherein said at least one amplification stage comprises via a MOSFET amplification.

Assignees

• Univ Texas
• Nat Tech & Eng Solutions Sandia Llc

Inventors

• Almeida Loya Sergio Fabian
• Zubia David
• Garcia Ernest J
• Mireles Jr Jose

Classifications

• B81B2201/0242

  Gyroscopes · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81B7/0087

  On-device systems and sensors for controlling, regulating or monitoring · CPC title

• G01P15/125 Primary

  by capacitive pick-up · CPC title

• B81B7/02 Primary

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title