Metal deposition methods

Patent metadata

Field	Value
Publication number	US-10480066-B2
Application number	US-201816123437-A
Country	US
Kind code	B2
Filing date	Sep 6, 2018
Priority date	Dec 19, 2015
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

First claim

What is claimed is:

1. A method of forming an amorphous metal layer, the method comprising:
exposing a substrate surface of a substrate material to a nucleation precursor to form a conformal amorphous nucleation layer, the nucleation precursor comprising a silicon precursor with a general formula of Si a H b X c , where each X is a halogen independently selected from F, Cl, Br and I, a is any integer greater than or equal to 1, b and c are each less than or equal to 2a+2 and b+c is equal to 2a+2; and
converting the conformal amorphous nucleation layer to a conformal amorphous metal layer by substituting atoms of the conformal amorphous nucleation layer with metal atoms from a metal precursor.

2. The method of claim 1 , wherein the substrate material consists essentially of a metal material.

3. The method of claim 1 , wherein the substrate material comprises a dielectric material.

4. The method of claim 3 , wherein the substrate material comprises aluminum oxide or titanium nitride.

5. The method of claim 1 , wherein the nucleation precursor further comprises a boron precursor.

6. The method of claim 5 , wherein the nucleation precursor comprises one or more species with a general formula of B d H e X f R g , where each X is a halogen independently selected from F, Cl, Br and I, each R is an independently selected C1-C4 alkyl group, d is any integer greater than or equal to 1, each of e, f and g is less than or equal to d+2 and e+f+g is equal to d+2.

7. The method of claim 1 , wherein the metal precursor comprises tungsten and the conformal amorphous metal layer comprises tungsten.

8. The method of claim 7 , wherein the metal precursor comprises one or more of WF 6 , WCl 6 , WCl 5 , and W(CO) 5 .

9. A method of forming an amorphous metal layer, the method comprising:
exposing a substrate surface of a substrate material to a nucleation precursor to form a conformal amorphous nucleation layer, the nucleation precursor comprising a boron precursor with a general formula of B d H e X f R g , where each X is a halogen independently selected from F, Cl, Br and I, each R is an independently selected C1-C4 alkyl group, d is any integer greater than or equal to 1, each of e, f and g is less than or equal to d+2 and e+f+g is equal to d+2; and
converting the conformal amorphous nucleation layer to a conformal amorphous metal layer by substituting atoms of the conformal amorphous nucleation layer with metal atoms from a metal precursor.

10. The method of claim 9 , wherein the substrate material consists essentially of a metal material.

11. The method of claim 9 , wherein the substrate material comprises a dielectric material.

12. The method of claim 11 , wherein the substrate material comprises aluminum oxide or titanium nitride.

13. The method of claim 9 , wherein the nucleation precursor further comprises a silicon precursor.

14. The method of claim 13 , wherein the nucleation precursor comprises one or more species with a general formula of Si a H b X c , where each X is a halogen independently selected from F, Cl, Br and I, a is any integer greater than or equal to 1, b and c are each less than or equal to 2a+2 and b+c is equal to 2a+2.

15. The method of claim 9 , wherein the metal precursor comprises tungsten and the conformal amorphous metal layer comprises tungsten.

16. The method of claim 15 , wherein the metal precursor comprises one or more of WF 6 , WCl 6 , WCl 5 , and W(CO) 5 .

Assignees

• Applied Materials Inc

Inventors

• Wu Yong
• Gandikota Srinivas
• Mallick Abhijit Basu

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• C23C16/14 Primary

  Deposition of only one other metal element · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/0281

  of metallic sub-layers (C23C16/029 takes precedence) · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title