Reaction chamber passivation and selective deposition of metallic films

Patent metadata

Field	Value
Publication number	US-10480064-B2
Application number	US-201816040844-A
Country	US
Kind code	B2
Filing date	Jul 20, 2018
Priority date	Jun 8, 2016
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

First claim

What is claimed is:

1. A process for depositing a thin film on a substrate selectively, the process comprising:
passivating an interior surface of a reaction chamber by a first vapor deposition process while the reaction chamber does not contain the substrate, wherein the first vapor deposition process comprises one or more deposition cycles in which the interior surface of the reaction chamber is contacted with a first vapor-phase precursor and a second vapor-phase precursor;
selectively depositing a thin film on the substrate in the passivated reaction chamber by a second vapor deposition process comprising one or more selective deposition cycles; and
repeating passivating the interior surface of the reaction chamber after two or more selective deposition cycles have been performed.

2. The process of claim 1 , wherein passivating is repeated after every 50 or more selective deposition cycles.

3. The process of claim 1 , further comprising subjecting the interior surface of the reaction chamber to an etch process prior to passivating the interior surface of the reaction chamber.

4. The process of claim 1 , wherein the first vapor deposition process is an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

5. The process of claim 1 , wherein the first vapor-phase precursor is a silicon precursor and the second vapor-phase precursor is a nitrogen precursor.

6. The process of claim 5 , wherein the first vapor-phase precursor comprises disilane and the second vapor-phase precursor comprises one or more of atomic nitrogen, nitrogen radicals, and nitrogen plasma and one or more of atomic hydrogen, hydrogen radicals and hydrogen plasma.

7. The process of claim 1 , wherein passivating comprises depositing SiN on the interior surface of the reaction chamber.

8. The process of claim 1 , wherein passivating comprises depositing a passivation layer that does not comprise pure metal or pure silicon.

9. The process of claim 8 , wherein the passivation layer comprises metal oxide.

10. The process of claim 9 , wherein the metal oxide comprises tungsten.

11. The process of claim 1 , additionally comprising subjecting the substrate to a first surface treatment process prior to selectively depositing the thin film on the substrate.

12. The process of claim 11 , wherein the substrate comprises a first metallic surface and a second surface comprising silicon.

13. The process of claim 12 , wherein the first surface treatment process removes organic material present on the first metallic surface.

14. The process of claim 12 , wherein the first surface treatment process removes a passivation layer present on the first metallic surface.

15. The process of claim 12 wherein the thin film is selectively deposited on the first metallic surface of the substrate relative to the second surface of the substrate.

16. The process of claim 11 , wherein the first surface treatment process comprises exposing the substrate to a plasma.

17. The process of claim 11 , wherein the first surface treatment process comprises exposing the substrate to a treatment reactant comprising formic acid or an alcohol.

18. The process of claim 1 , further wherein the selective deposition cycle comprises contacting the substrate with a first precursor comprising silicon or born.

19. The process of claim 18 , wherein a layer of first material comprising silicon or boron is formed on the first metallic surface relative to the second surface comprising silicon.

20. The process of claim 19 , further comprising converting the first material on the first metallic surface to a second metallic material by exposing the first material to a second precursor comprising metal.

Assignees

• Asm Ip Holding Bv

Inventors

• Longrie Delphine
• Niskanen Antti Juhani
• Wang Han
• Xie Qi
• Maes Jan Willem
• Chen Shang
• Watarai Toshiharu
• Onuma Takahiro
• Ishikawa Dai
• Namba Kunitoshi

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/038

  covering conductive structures (H10W20/037 takes precedence) · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title