Phase shift mask

Patent metadata

Field	Value
Publication number	US-10474034-B2
Application number	US-201815916437-A
Country	US
Kind code	B2
Filing date	Mar 9, 2018
Priority date	Oct 20, 2014
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

First claim

What is claimed is:

1. A phase shift mask, comprising:
a substrate;
a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength, and the substrate being substantially transparent to the light of the first wavelength, such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern;
a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern; and
an open area between the first and second phase shift patterns in which no phase shift pattern is disposed, the open area continuously surrounding the first phase shift pattern.

2. The phase shift mask as claimed in claim 1 , wherein the second phase shift pattern has an opening therein, the opening corresponding to an alignment key.

3. The phase shift mask as claimed in claim 1 , wherein a minimum transmittance of the entire area of the phase shift mask is about 2% with respect to the light of the first wavelength.

4. The phase shift mask as claimed in claim 1 , wherein the phase shift mask does not include an opaque area.

5. A phase shift mask, comprising:
a substrate; and
a phase shift layer on the substrate, wherein an edge portion of the phase shift mask is a semitransparent region, wherein:
the phase shift mask includes a main pattern region and an open area,
the main pattern region has substantially the same thickness as the semitransparent region, and
the open area is an area in which no phase shift pattern is disposed, and continuously surrounds the main pattern region.

6. The phase shift mask as claimed in claim 5 , wherein the semitransparent region transmits about 2 to 10% of light.

7. The phase shift mask as claimed in claim 6 , wherein the phase shift layer includes one or more of chromium oxide or molybdenum silicide.

8. The phase shift mask as claimed in claim 5 , wherein the phase shift mask does not include an opaque layer at the edge portion, the edge portion being an outer edge of the phase shift mask.

9. The phase shift mask as claimed in claim 5 , wherein the semitransparent region is disposed between the main pattern region and an outermost edge of the phase shift mask.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jang Il-Yong
• Ko Hyung-Ho
• Yoon Jin-Sang

Classifications

• G03F7/203

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F1/42

  Alignment or registration features, e.g. alignment marks on the mask substrates · CPC title

• G03F7/22 Primary

  Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)} · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title