Photomask and method of forming the same and methods of manufacturing electronic device and display device using the photomask

Patent metadata

Field	Value
Publication number	US-9989857-B2
Application number	US-201514849006-A
Country	US
Kind code	B2
Filing date	Sep 9, 2015
Priority date	Oct 20, 2014
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

First claim

What is claimed is:

1. A method of manufacturing a unit substrate, the method comprising:
providing a mother substrate, the mother substrate having a size sufficient to provide at least two unit substrates;
aligning a phase shift mask with a first location of the mother substrate;
irradiating a first region of the mother substrate through the phase shift mask aligned with the first location;
aligning the phase shift mask with a second location of the mother substrate such that the phase shift mask overlaps a sub-region of the irradiated first region; and
irradiating a second region of the mother substrate through the phase shift mask aligned with the second location such that the sub-region is irradiated for a second time, wherein:
the phase shift mask includes:
a substrate;
a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern;
a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern, the first phase shift pattern inducing interference when light of the first wavelength is irradiated through the first phase shift pattern; and
an open area between the first and second phase shift patterns in which no phase shift pattern is disposed, and

in irradiating the first region of the mother substrate, a region of the mother substrate that surrounds the first phase shift pattern is irradiated through the open area of the phase shift mask.

2. The method as claimed in claim 1 , wherein the phase shift mask includes:
a substrate; and
a phase shift layer on the substrate, wherein an edge portion of the phase shift mask is a semitransparent region.

3. The method as claimed in claim 2 , wherein the sub-region is irradiated through the semitransparent region of the phase shift mask.

4. The method as claimed in claim 3 , wherein the semitransparent region has an opening therein, the opening corresponding to an alignment key.

5. The method as claimed in claim 4 , wherein an alignment key, corresponding to the opening, is formed in the sub-region.

6. The method as claimed in claim 1 , wherein the mother substrate is a silicon wafer or a mother display panel substrate.

7. The method as claimed in claim 6 , further comprising, after irradiating the second region, separating the mother substrate into at least two unit substrates, wherein the sub-region is in a lane between adjacent unit substrates.

8. A semiconductor device fabricated according to the method as claimed in claim 1 .

9. A display panel fabricated according to the method as claimed in claim 1 .

10. The method as claimed in claim 1 , wherein, in irradiating the first region of the mother substrate, the mother substrate has a negative photoresist thereon.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jang Il-Yong
• Ko Hyung-Ho
• Yoon Jin-Sang

Classifications

• G03F1/42

  Alignment or registration features, e.g. alignment marks on the mask substrates · CPC title

• G03F7/203

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title

• G03F7/22 Primary

  Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)} · CPC title