High temperature chuck for plasma processing systems

Patent metadata

Field	Value
Publication number	US-10468285-B2
Application number	US-201715642977-A
Country	US
Kind code	B2
Filing date	Jul 6, 2017
Priority date	Feb 3, 2015
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

First claim

We claim:

1. A method of plasma processing, comprising:
loading a workpiece onto a chuck having an electrically insulating top surface;
providing a DC voltage differential across two spatially separated electrodes within the electrically insulating top surface, to clamp the workpiece to the chuck;
heating the chuck and the workpiece by passing current through heater elements embedded in the chuck;
providing process gases in a chamber surrounding the chuck;
providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber, to ignite a plasma from the process gases; and
adjusting a DC offset between at least one of the spatially separated electrodes and at least one of the one or more walls of the chamber, in response to a signal from a DC probe that extends through the electrically insulating top surface.

2. The method of plasma processing of claim 1 , further comprising flowing a heat transfer gas through the top surface into channels defined by the top surface, wherein the channels allow the heat transfer gas to spread between the top surface and the workpiece.

3. The method of plasma processing of claim 1 , wherein heating the chuck comprises heating the top surface to a temperature of 400 C or higher.

4. The method of plasma processing of claim 1 , further comprising flowing a purge gas through a gap between the conductive plate and the electrically insulating top surface.

5. The method of plasma processing of claim 4 , wherein flowing the purge gas comprises flowing at least one of helium and hydrogen.

6. The method of plasma processing of claim 4 , wherein flowing the purge gas comprises providing a positive pressure within the gap with respect to the chamber.

7. The method of plasma processing of claim 1 , further comprising flowing a cooling fluid through channels of a base that is mechanically coupled with a shaft housing of a shaft that supports the chuck, the shaft being mechanically coupled with the conductive plate such that the cooling fluid cools the base, the shaft housing and the conductive plate.

8. The method of plasma processing of claim 1 , wherein providing the DC voltage differential across the two spatially separated electrodes within the electrically insulating top surface comprises providing the DC voltage differential through connectors disposed within a shaft that supports the chuck, the shaft comprising:
an electrically conductive shaft housing that is electrically coupled with the conductive plate; and
a plurality of connectors, comprising electrical connectors for the heater elements and electrical connectors for the electrodes, each of the electrical connectors for the electrodes comprising:
an inner conductor,
an insulating layer that surrounds the inner conductor,
a ground tube that surrounds the insulating layer, and
a ceramic tube that surrounds the ground tube.

9. The method of plasma processing of claim 8 , wherein providing the DC voltage differential comprises providing the DC voltage differential with the connectors passing through a base, the base comprising:
an electrically conductive base housing that is electrically coupled with the shaft housing; and
an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the electrically insulating terminal block.

10. The method of plasma processing of claim 9 , wherein providing the DC voltage differential comprises providing the shaft housing with a thickness of at least 1.5 millimeters, for removal of heat from the conductive plate, through the shaft housing, to the base housing.

11. The method of plasma processing of claim 1 , further comprising monitoring a temperature of the chuck using one of a thermocouple and a resistance temperature detector.

12. A method of plasma processing, comprising:
loading a workpiece onto a chuck having an electrically insulating top surface;
providing a DC voltage differential across two spatially separated electrodes within the electrically insulating top surface, to clamp the workpiece to the chuck, wherein providing the DC voltage differential comprises providing the DC voltage differential through connectors disposed within a shaft that supports the chuck, the shaft comprising:
an electrically conductive shaft housing that is electrically coupled with a conductive plate beneath the chuck; and
a plurality of connectors, comprising electrical connectors for heater elements embedded in the chuck, and electrical connectors for the electrodes, each of the electrical connectors for the electrodes comprising:
an inner conductor,
an insulating layer that surrounds the inner conductor,
a ground tube that surrounds the insulating layer, and
a ceramic tube that surrounds the ground tube;

the method further comprising:
heating the chuck and the workpiece by passing current through the heater elements;
providing process gases in a chamber surrounding the chuck; and
providing an RF voltage between the conductive plate, and one or more walls of the chamber, to ignite a plasma from the process gases.

13. The method of plasma processing of claim 12 , wherein providing the DC voltage differential comprises providing the DC voltage differential with the connectors passing through a base, the base comprising:
an electrically conductive base housing that is electrically coupled with the electrically conductive shaft housing; and
an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the electrically insulating terminal block.

14. The method of plasma processing of claim 13 , wherein providing the DC voltage differential comprises providing the electrically conductive shaft housing with a thickness of at least 1.5 millimeters, for removal of heat from the conductive plate, through the shaft housing, to the base housing.

15. The method of plasma processing of claim 12 , further comprising flowing a heat transfer gas through the top surface into channels defined by the top surface, wherein the channels allow the heat transfer gas to spread between the top surface and the workpiece.

16. The method of plasma processing of claim 12 , wherein heating the chuck comprises heating the top surface to a temperature of 400 C or higher.

17. The method of plasma processing of claim 12 , further comprising flowing a purge gas through a gap between the conductive plate and the electrically insulating top surface.

18. The method of plasma processing of claim 17 , wherein flowing the purge gas comprises flowing at least one of helium and hydrogen.

19. The method of plasma processing of claim 12 , further comprising flowing a cooling fluid through channels of a base that is mechanically coupled with the electrically conductive shaft housing, the shaft being mechanically coupled with the conductive plate such that the cooling fluid cools the base, the electrically conductive shaft housing and the conductive plate.

Assignees

• Applied Materials Inc

Inventors

• Tran Toan Q
• Malik Sultan
• Lubomirsky Dmitry
• Roy Shambhu N
• Kobayashi Satoru
• Cho Tae Seung
• Park Soonam
• Venkataraman Shankar

Classifications

• H10P72/0432 Primary

  mainly by conduction · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H01L21/67103

  Electricity · mapped topic

• H01L21/3065

  Electricity · mapped topic