Stacked semiconductor method and apparatus
US-2024096745-A1 · Mar 21, 2024 · US
US10461017B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10461017-B2 |
| Application number | US-201715665574-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 1, 2017 |
| Priority date | Aug 2, 2016 |
| Publication date | Oct 29, 2019 |
| Grant date | Oct 29, 2019 |
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A power module which comprises a semiconductor chip, at least one cooling plate with at least one cooling channel thermally coupled to the semiconductor chip and being configured so that a coolant is guidable through the at least one cooling channel, and an encapsulant encapsulating at least part of the semiconductor chip and part of the at least one cooling channel, wherein at least part of a main surface of the cooling plate forms part of an external surface of the power module.
Opening claim text (preview).
What is claimed is: 1. A power module, comprising: a semiconductor chip; at least one cooling plate with at least one cooling channel integrally formed therein, thermally coupled to a first main surface of the semiconductor chip and being configured so that a coolant is guidable through the at least one cooling channel; and an encapsulant encapsulating at least part of the semiconductor chip and part of the at least one cooling channel; a second cooling channel thermally coupled to a second main surface of the semiconductor chip opposing the first main surface; an electrically conductive wiring structure which is configured for electrically connecting the semiconductor chip with regard to an environment and which is attached to a surface of the cooling plate; wherein at least part of a main surface of the cooling plate forms part of an external surface of the power module. 2. The power module according to claim 1 , wherein the at least one cooling channel comprises at least one further first cooling channel thermally coupled to the first main surface of the semiconductor chip. 3. The power module according to claim 2 , wherein the first cooling channel and the at least one further first cooling channel form part of the same cooling plate, in particular being arranged substantially in parallel to the first main surface of the semiconductor chip. 4. The power module according to claim 1 , comprising a spacer body, in particular a thermally conductive spacer body, arranged between the semiconductor chip and the first cooling channel. 5. The power module according to claim 1 , wherein the at least one cooling channel comprises at least one further second cooling channel thermally coupled, in particular by a direct metallic or plastic contact, to the second main surface of the semiconductor chip. 6. The power module according to claim 1 wherein the second cooling channel and the at least one further second cooling channel form part of a further common cooling plate, in particular being arranged substantially in parallel to the second main surface of the semiconductor chip. 7. The power module according to claim 1 , wherein at least one of the cooling plate and the at least one cooling channel comprises or consists of at least one of the group consisting of a ceramic body, and a metal body, in particular a metal body with a dielectric coating. 8. The power module according to claim 1 , wherein the encapsulant comprises or consists of a mold-type encapsulant. 9. The power module according to claim 1 , comprising a coolant supply unit configured for driving coolant, in particular at least one of a liquid coolant and a gaseous coolant, to flow through the at least one cooling channel. 10. The power module according to claim 1 , comprising a chip carrier between a first main surface of the semiconductor chip and at least one first cooling channel of the at least one cooling channel. 11. The power module according to claim 10 , comprising a further chip carrier on a second main surface of the semiconductor chip opposing the first main surface. 12. The power module according to claim 10 , wherein at least one of the chip carrier and the further chip carrier is configured as at least one of the group consisting of a leadframe, a metal-electric insulator and thermal conductor-metal sheet stack, a Direct Copper Bonding substrate, and a Direct Aluminium Bonding substrate. 13. The power module according to claim 1 , wherein the at least one cooling plate is configured for direct cooling by a coolant in the form of a liquid and/or a gas. 14. A vehicle, comprising a power module according to claim 1 . 15. A package, comprising: an electronic chip having a first main surface and an opposing second main surface; a first cooling channel integrally formed within a cooling plate, thermally coupled to the first main surface of the electronic chip and being configured so that a coolant is guidable through the first cooling channel; a second cooling channel thermally coupled to the second main surface of the electronic chip and being configured so that a coolant is guidable through the second cooling channel; an encapsulant encapsulating at least part of the electronic chip, part of the first cooling channel and part of the second cooling channel; an electrically conductive wiring structure which is configured for electrically connecting the semiconductor chip with regard to an environment and which is attached to a surface of the cooling plate; wherein at least a section of at least one of the first cooling channel and the second cooling channel is circumferentially partially covered by the encapsulant and partially exposed from the encapsulant.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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