Method of separating electronic devices having a back layer and apparatus

Patent metadata

Field	Value
Publication number	US-10446446-B2
Application number	US-201815874307-A
Country	US
Kind code	B2
Filing date	Jan 18, 2018
Priority date	Mar 21, 2014
Publication date	Oct 15, 2019
Grant date	Oct 15, 2019

Abstract

A method of singulating a wafer includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface. The method includes placing the wafer onto a carrier substrate. The method includes singulating the wafer through the spaces to form singulation lines after the placing the wafer on the carrier substrate, wherein singulating comprises stopping in proximity to the layer of material. The method includes applying a pressure to the entire wafer thereby separating the layer of material in the singulation lines, wherein applying the pressure comprises using a fluid. The method provide a way to batch separate layers of material disposed on wafers after singulating the wafers.

First claim

What is claimed is:

1. A method of singulating a wafer comprising:
providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface;
placing the wafer onto a carrier substrate;
singulating the wafer through the spaces to form singulation lines after placing the wafer on the carrier substrate, wherein singulating comprises stopping in proximity to the layer of material; and
applying a pressure to the entire wafer thereby separating the layer of material in the singulation lines, wherein applying the pressure comprises using a fluid.

2. The method of claim 1 , wherein applying the pressure comprises applying the pressure substantially perpendicularly through the carrier substrate while substantially restraining the first major surface of the wafer.

3. The method of claim 1 , wherein:
applying the pressure comprises:
placing the wafer and carrier substrate within a chamber, the chamber at least partially enclosing a pressure transfer vessel, wherein the pressure transfer vessel contains the fluid; and
moving a compression structure against the pressure transfer vessel thereby applying a pressure substantially uniformly along the second major surface to separate the layer of material in the singulation lines.

4. The method of claim 3 , wherein:
placing the wafer and the carrier substrate within the chamber comprises placing the pressure transfer vessel against the carrier substrate such that the carrier substrate is between the pressure transfer vessel and the wafer; and wherein the pressure transfer vessel has a width that exceeds that of the wafer.

5. The method of claim 4 further comprising placing a pressure plate between the pressure transfer vessel and the carrier substrate.

6. The method of claim 1 , wherein:
providing the wafer comprises providing a semiconductor wafer where the layer of material comprises a conductive material.

7. The method of claim 1 further comprising placing a protective film proximate to the first major surface of the wafer before applying the pressure.

8. The method of claim 1 , wherein applying the pressure comprises extruding portions of the carrier substrate into the singulation lines to separate the layer of material, and wherein the portions of the separated layer of material remain on the carrier substrate after separating the layer of material.

9. The method of claim 1 , further comprising heating one or more of the wafer and the carrier substrate during at least a portion of the step of applying the pressure.

10. A method of singulating a layer of material on a singulated substrate comprising:
providing a semiconductor substrate that is attached to a carrier substrate, the semiconductor substrate having a plurality of die formed as part of the semiconductor substrate and separated from each other by singulation lines comprising gaps, wherein the semiconductor substrate has first and second opposing major surfaces, and wherein the layer of material is disposed atop the second major surface, and wherein the singulation lines terminate adjacent to the layer of material; and
using a fluid to simultaneously apply a pressure to the entire semiconductor substrate thereby separating the layer of material in the singulation lines.

11. The method of claim 10 , wherein using the fluid comprises:
placing the semiconductor substrate and the carrier substrate within a chamber, the chamber at least partially enclosing a pressure transfer vessel that contains the fluid; and
applying a pressure to the pressure transfer vessel thereby applying a transferred pressure to the layer of material to separate the layer of material in the singulation lines.

12. A method for batch singulating a semiconductor wafer comprising:
providing the semiconductor wafer having a plurality of die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface;
placing the semiconductor wafer onto a carrier substrate, wherein the layer of material is adjacent to the carrier substrate;
after placing the semiconductor wafer onto the carrier substrate, etching the semiconductor wafer through the spaces to form singulation lines comprising gaps and to expose portions of the layer of material in the singulation lines; and
applying a pressure to the entire semiconductor wafer through the carrier substrate to separate the layer of material in the singulation lines.

13. The method of claim 12 , wherein applying the pressure comprises applying the pressure using a fluid substantially perpendicularly to the second major surface of the semiconductor wafer while restraining the first major surface of the semiconductor wafer.

14. The method of claim 12 , further comprising heating one or more of the semiconductor wafer and the carrier substrate during at least a portion of the step of applying the pressure.

15. A method for separating a layer of material on a wafer, comprising:
providing the wafer having a plurality of die formed on the wafer and separated from each other by singulation lines, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed adjacent to the second major surface, and wherein the singulation lines extend from the first major surface and terminate proximate to the layer of material, and wherein the wafer is attached to a carrier substrate; and
substantially simultaneously applying a pressure along the entire second major surface of the wafer through the carrier substrate to separate the layer of material in the singulation lines.

16. The method of claim 15 , wherein applying the pressure comprises applying the pressure using a fluid substantially perpendicularly to the second major surface of the wafer.

17. The method of claim 15 , further comprising heating one or more of the wafer and the carrier substrate during at least a portion of the step of applying the pressure.

18. The method of claim 15 further comprising:
placing a protective film proximate to the first major surface of the wafer before applying the pressure; and
restraining the wafer proximate to the first major surface of while applying the pressure.

19. The method of claim 15 , wherein:
applying the pressure comprises extruding portions of the carrier substrate into the singulation lines while restraining the wafer to separate the layer of material; and
the portions of the separated layer of material remain on the carrier substrate after separating the layer of material.

20. The method of claim 15 , wherein:
providing the wafer comprises providing a semiconductor wafer where the layer of material comprises at least one of conductive material, a wafer back coat film, or a die-attach film.

Assignees

• Semiconductor Components Ind Llc

Inventors

• Grivna Gordon M

Classifications

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/742

  involving stretching of the auxiliary support post dicing · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/0442

  Apparatus for placing on an insulating substrate, e.g. tape · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title