Plasma processing apparatus with shower plate having protrusion for suppressing film formation in gas holes of shower plate

Patent metadata

Field	Value
Publication number	US-10443130-B2
Application number	US-201514968346-A
Country	US
Kind code	B2
Filing date	Dec 14, 2015
Priority date	Dec 18, 2014
Publication date	Oct 15, 2019
Grant date	Oct 15, 2019

Abstract

There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

First claim

What is claimed is:

1. A plasma processing apparatus that processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate a supplied microwave, the plasma processing apparatus including a plasma generating antenna which is equipped with the shower plate configured to supply a first gas and a second gas into a processing vessel, which comprises:
a protrusion member made of a conductor and installed to protrude downward from a lower end surface of the shower plate, the protrusion member having a truncated conical shape,
wherein an outer surface of the protrusion member spreads outward as it goes from a top end to a bottom end thereof,
wherein the shower plate includes a plurality of first gas supply holes through which the first gas is supplied into a plasma space of the processing vessel and a plurality of second gas supply holes through which the second gas is supplied into the plasma space of the processing vessel,
wherein an upwardly-depressed concave portion is formed in a lower end surface of the protrusion member,
wherein through-holes are in communication with the concave portion from an upper end surface of the protrusion member and are formed inside the protrusion member,
wherein each of the first gas supply holes is disposed inward of the outer surface of the protrusion member and is connected to at least one of the through-holes,
wherein each of the second gas supply holes is disposed outward of the outer surface of the protrusion member as viewed from above,
wherein an orifice portion having a smaller sectional area than one of the through-holes is formed in one of the through-holes,
wherein a potential of the protrusion member is a ground potential,
wherein a microwave radiation hole through which the supplied microwave is radiated into the plasma space of the processing vessel is formed in the shower plate, and
wherein the microwave radiation hole is disposed inward of an outer circumferential end portion of the protrusion member as viewed from above, and is opened to a region of the plasma space, the region being interposed between the lower end surface of the shower plate and the outer surface of the protrusion member, to introduce the supplied microwave into the region.

2. The plasma processing apparatus of claim 1 , wherein a slope of a vertical cross section of the protrusion member is formed in a parabolic shape in which a contact point of the shower plate and the slope of the vertical cross section of the protrusion member is set as a vertex of the parabolic shape.

3. The plasma processing apparatus of claim 1 , wherein a minimum energy required to decompose the first gas is less than a minimum energy required to excite the second gas.

4. The plasma processing apparatus of claim 3 , wherein the first gas is a raw material gas, and the second gas is a plasma generation gas.

5. The plasma processing apparatus of claim 1 , wherein the microwave radiation hole is arranged such that an imaginary line drawn vertically downward from a center of the microwave radiation hole intersects the outer surface of the protrusion member.

Assignees

• Tokyo Electron Ltd

Inventors

• Ikeda Taro

Classifications

• H01J37/32229

  Waveguides · CPC title

• C23C16/45563

  Gas nozzles · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32192

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title