Manufacturing method of semiconductor device comprising oxide semiconductor film

Patent metadata

Field	Value
Publication number	US-10438815-B2
Application number	US-201815893748-A
Country	US
Kind code	B2
Filing date	Feb 12, 2018
Priority date	Sep 12, 2014
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

First claim

What is claimed is:

1. A manufacturing method of a semiconductor device comprising the steps of:
forming an oxide semiconductor film with a sputtering apparatus;
forming an oxide insulating film over and in contact with the oxide semiconductor film;
forming a protective film over and in contact with the oxide insulating film; and
adding oxygen to the oxide insulating film through the protective film,
wherein the protective film comprises at least one element selected from In, Zn, Ga, Sn, Ti, W, Ta, and Mo, and
wherein the oxide semiconductor film is formed at a condition in which an oxygen partial pressure in the sputtering apparatus is higher than 0% and lower than 50%.

2. The manufacturing method of a semiconductor device according to claim 1 , further comprising a step of heating the oxide insulating film before forming the protective film.

3. The manufacturing method of a semiconductor device according to claim 1 ,
wherein an oxygen gas is used for a sputtering gas at the step of forming the oxide semiconductor film, and
wherein the oxygen gas has a dew point of −40° C. or lower.

4. The manufacturing method of a semiconductor device according to claim 1 , further comprising a step of heating the oxide semiconductor film before forming the oxide insulating film,
wherein an oxygen vacancy is formed in the oxide semiconductor film in the step of heating the oxide semiconductor film.

5. The manufacturing method of a semiconductor device according to claim 4 ,
wherein the step of heating the oxide semiconductor film is performed in an atmosphere in which an oxygen partial pressure is lower than or equal to 1%.

6. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises In, Zn, and M, and
wherein M is any one of Ti, Ga, Y, Zr, La, Ce, Nd, Sn, and Hf.

7. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises a crystal part.

8. The manufacturing method of a semiconductor device according to claim 1 , wherein the protective film further comprises Si.

9. The manufacturing method of a semiconductor device according to claim 1 , wherein the step of adding oxygen is performed with a plasma treatment apparatus.

10. A manufacturing method of a semiconductor device comprising the steps of:
forming an oxide semiconductor film with a sputtering apparatus;
forming an oxide insulating film over and in contact with the oxide semiconductor film;
forming a protective film over and in contact with the oxide insulating film;
adding oxygen to the oxide insulating film through the protective film;
removing the protective film; and
forming an insulating film over and in contact with the oxide insulating film after removing the protective film,
wherein the protective film comprises at least one element selected from In, Zn, Ga, Sn, Ti, W, Ta, and Mo, and
wherein the oxide semiconductor film is formed at a condition in which an oxygen partial pressure in the sputtering apparatus is higher than 0% and lower than 50%.

11. The manufacturing method of a semiconductor device according to claim 10 , further comprising a step of heating the oxide insulating film before forming the protective film.

12. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the insulating film is a nitride insulating film.

13. The manufacturing method of a semiconductor device according to claim 10 ,
wherein an oxygen gas is used for a sputtering gas at the step of forming the oxide semiconductor film, and
wherein the oxygen gas has a dew point of −40° C. or lower.

14. The manufacturing method of a semiconductor device according to claim 10 , further comprising a step of heating the oxide semiconductor film before forming the oxide insulating film,
wherein an oxygen vacancy is formed in the oxide semiconductor film in the step of heating the oxide semiconductor film.

15. The manufacturing method of a semiconductor device according to claim 14 ,
wherein the step of heating the oxide semiconductor film is performed in an atmosphere in which an oxygen partial pressure is lower than or equal to 1%.

16. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the oxide semiconductor film comprises In, Zn, and M, and
wherein M is any one of Ti, Ga, Y, Zr, La, Ce, Nd, Sn, and Hf.

17. The manufacturing method of a semiconductor device according to claim 10 ,
wherein the oxide semiconductor film comprises a crystal part.

18. The manufacturing method of a semiconductor device according to claim 10 , wherein the protective film further comprises Si.

19. The manufacturing method of a semiconductor device according to claim 10 , wherein the step of adding oxygen is performed with a plasma treatment apparatus.

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Kurosaki Daisuke
• Shima Yukinori
• Handa Takuya

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6519

  the substance being oxygen · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title