Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-9496412-B2
Application number	US-201514796403-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Jul 15, 2014
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
a source electrode electrically connected to the oxide semiconductor film; and
a drain electrode electrically connected to the oxide semiconductor film;
wherein the oxide semiconductor film comprises a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film,
wherein the first oxide semiconductor film comprises a first region in which an atomic proportion of In is larger than an atomic proportion of M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf,
wherein the second oxide semiconductor film comprises a second region in which an atomic proportion of In is smaller than the atomic proportion of In of the first oxide semiconductor film, and
wherein a portion of the second oxide semiconductor film which overlaps with the source electrode or the drain electrode is thicker than the first oxide semiconductor film, and a portion of the second oxide semiconductor film which does not overlap with the source electrode or the drain electrode is thinner than the first oxide semiconductor film.

2. A semiconductor device comprising:
a transistor comprising:
a first gate electrode;
a first gate insulating film over the first gate electrode;
an oxide semiconductor film over the first gate insulating film;
a source electrode electrically connected to the oxide semiconductor film;
a drain electrode electrically connected to the oxide semiconductor film;
a second gate insulating film over the oxide semiconductor film; and
a second gate electrode over the second gate insulating film,
wherein the oxide semiconductor film comprises a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film,
wherein the first oxide semiconductor film comprises a first region in which an atomic proportion of In is larger than an atomic proportion of M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf,
wherein the second oxide semiconductor film comprises a second region in which an atomic proportion of In is smaller than the atomic proportion of In of the first oxide semiconductor film, and
wherein a portion of the second oxide semiconductor film which overlaps with the source electrode or the drain electrode is thicker than the first oxide semiconductor film, and a portion of the second oxide semiconductor film which does not overlap with the source electrode or the drain electrode is thinner than the first oxide semiconductor film.

3. The semiconductor device according to claim 1 or claim 2 ,
wherein the oxide semiconductor film comprises In, M, and Zn, and
wherein the M is Ga.

4. The semiconductor device according to claim 1 or claim 2 ,
wherein the oxide semiconductor film comprises a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the oxide semiconductor film is located.

5. The semiconductor device according to claim 1 or claim 2 , wherein the first region comprises a portion in which a proportion of the crystal part is larger than the second region.

6. The semiconductor device according to claim 1 or claim 2 , wherein the first region comprises a portion with lower concentration of hydrogen than the second region.

7. A display device comprising:
the semiconductor device according to claim 1 or claim 2 , and
at least one of a display element and a touch sensor.

8. An electronic device comprising the semiconductor device according to claim 1 or claim 2 .

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Okazaki Kenichi
• Kurosaki Daisuke
• Shima Yukinori
• Hosaka Yasuharu

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title