Semiconductor device including oxide semiconductor

Patent metadata

Field	Value
Publication number	US-9640555-B2
Application number	US-201514733052-A
Country	US
Kind code	B2
Filing date	Jun 8, 2015
Priority date	Jun 20, 2014
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first insulating film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein the third insulating film includes nitrogen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.

2. The semiconductor device according to claim 1 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.

3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.

5. A display device comprising:
the semiconductor device according to claim 1 ; and
a display element.

6. A display module comprising:
the display device according to claim 5 ; and
a touch sensor.

7. An electronic appliance comprising:
the semiconductor device according to claim 1 ; and
at least one of an operation key and a battery.

8. The semiconductor device according to claim 1 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .

9. A semiconductor device comprising:
a gate electrode;
a first insulating film over the gate electrode;
an oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the oxide semiconductor film;
a drain electrode electrically connected to the oxide semiconductor film;
a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein the third insulating film includes nitrogen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.

10. The semiconductor device according to claim 9 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.

11. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

12. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.

13. A display device comprising:
the semiconductor device according to claim 9 ; and
a display element.

14. A display module comprising:
the display device according to claim 13 ; and
a touch sensor.

15. An electronic appliance comprising:
the semiconductor device according to claim 9 ; and
at least one of an operation key and a battery.

16. The semiconductor device according to claim 9 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .

17. A semiconductor device comprising:
a first insulating film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.

18. The semiconductor device according to claim 17 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.

19. The semiconductor device according to claim 17 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

20. The semiconductor device according to claim 17 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.

21. A display device comprising:
the semiconductor device according to claim 17 ; and
a display element.

22. A display module comprising:
the display device according to claim 21 ; and
a touch sensor.

23. An electronic appliance comprising:
the semiconductor device according to claim 17 ; and
at least one of an operation key and a battery.

24. The semiconductor device according to claim 17 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .

Assignees

• Semiconductor Energy Lab

Inventors

• Okazaki Kenichi
• Koezuka Junichi
• Jintyou Masami
• Iguchi Takahiro

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title