Composition for forming resist underlayer film with reduced outgassing

Patent metadata

Field	Value
Publication number	US-10437150-B2
Application number	US-200913131474-A
Country	US
Kind code	B2
Filing date	Nov 19, 2009
Priority date	Nov 27, 2008
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

Underlayer films of high-energy radiation resists applied onto semiconductor substrates in a lithography process for producing semiconductor devices and that are used to prevent reflection, static electrification, and development defects and to suppress outgassing during the exposure of resist layers with high-energy radiation are prepared from compositions including a film component having an aromatic ring structure or a hetero ring structure. The film component having an aromatic ring structure or a hetero ring structure is contained at a proportion of 5 to 85% by mass. The film component may be a compound having an aromatic ring structure or a hetero ring structure, and the compound may be a polymer or a polymer precursor including a specific repeating unit. The aromatic ring may be a benzene ring or fused benzene ring, and the hetero ring structure may be triazinetrione ring.

First claim

The invention claimed is:

1. A method for producing a semiconductor device, the method comprising:
forming an underlayer film by applying a composition onto a semiconductor substrate, and
baking the substrate, wherein
the underlayer film has a film thickness of 10 to 30 nm, and
the composition comprises:
an acid catalyst, and
a film component, the film component being a compound having an aromatic ring structure, where the compound having an aromatic structure is a polymer or a polymer precursor including a repeating unit structure of Formula (1):

where
n1 is an integer of 0 to 2,
n2 is an integer of 0 or more and an integer not more than a maximum number of substituents optionally substituted for a hydrogen atom on a corresponding ring,
R 1 is an alkyl group, a halogen group, a nitro group, a cyano group, or an amino group, wherein
the film component having an aromatic ring structure is contained in the underlayer film at a proportion of 5 to 85% by mass, and
the polymer or a polymer precursor includes the repeating unit structure of Formula (1) including a dimer of the repeating unit structure of Formula (1) at a content of 10% by mass or less, and has a degree of distribution expressed by:

weight average molecular weight Mw/number average molecular weight Mn of 3.00 or less;
forming a resist layer on the underlayer film;
exposing the resist formed as a layer on the underlayer film to an EUV; and
developing the resist after the exposure.

Assignees

• Sakamoto Rikimaru
• Ho Bangching
• Endo Takafumi
• Nissan Chemical Ind Ltd

Inventors

• Sakamoto Rikimaru
• Ho Bangching
• Endo Takafumi

Classifications

• G03F7/091 Primary

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• G03F7/093

  characterised by antistatic means, e.g. for charge depletion · CPC title