Electroconductive film and method for manufacturing electroconductive pattern
US-11450445-B2 · Sep 20, 2022 · US
characterised by antistatic means, e.g. for charge depletion
characterised by antistatic means, e.g. for charge depletion · Cooperative Patent Classification (CPC)
Computing, optics, measurement, and control technologies.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | G03F7/093 |
| Official title | {characterised by antistatic means, e.g. for charge depletion} |
| Display label | characterised by antistatic means, e.g. for charge depletion |
| Total patents | 89 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 7 |
| 2017 | 12 |
| 2018 | 4 |
| 2019 | 12 |
| 2020 | 10 |
| 2021 | 9 |
| 2022 | 9 |
| 2023 | 5 |
| 2024 | 7 |
| 2025 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for forming target substrate and electronic device
US-2022179305-A1 · Jun 9, 2022 · US
Resist underlayer film material, patterning process, and method for forming resist underlayer film
US-2021397092-A1 · Dec 23, 2021 · US
Photo-patternable organic semiconductor (osc) polymers for organic thin-film transistors
US-2021367153-A1 · Nov 25, 2021 · US
Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
US-11177130-B2 · Nov 16, 2021 · US
Water-soluble diacetylene, photolithography composition comprising water-soluble diacetylene monomer and conductive polymer, and fine pattern preparation method using same
US-11131925-B2 · Sep 28, 2021 · US
Conductive composition and method for manufacturing same, and conductor and method for manufacturing same
US-2021261765-A1 · Aug 26, 2021 · US
Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
US-11037786-B2 · Jun 15, 2021 · US
Mask substrate and method for forming mask substrate
US-2021124257-A1 · Apr 29, 2021 · US
Methods of forming a pattern and methods of fabricating a semiconductor device
US-2021026245-A1 · Jan 28, 2021 · US
Conductive film, method for producing same, conductor, resist pattern formation method, and laminate
US-2021005343-A1 · Jan 7, 2021 · US
Directly photo-patternable, stretchable, electrically conductive polymer
US-2020401042-A1 · Dec 24, 2020 · US
Electroconductive film and method for manufacturing electroconductive pattern
US-2020303086-A1 · Sep 24, 2020 · US
Photolithography methods and structures that reduce stochastic defects
US-10782606-B2 · Sep 22, 2020 · US
Conductive polymer composition, coated product and patterning process
US-2020292941-A1 · Sep 17, 2020 · US
Lithographically patterned electrically conductive hydrogels, photo-curable compositions, and elastomers formed from such compositions
US-2020257199-A1 · Aug 13, 2020 · US
Electroconductive film and method for manufacturing electroconductive pattern
US-10720259-B2 · Jul 21, 2020 · US
Process for the production of a layered body and layered bodies obtainable therefrom
US-10671192-B2 · Jun 2, 2020 · US
Metal-containing film-forming composition, metal-containing film and pattern-forming method
US-2020159121-A1 · May 21, 2020 · US
Ultra-High Resolution Conductive Traces Flexible Biocomposites by Resist Stenciling
US-2020096869-A1 · Mar 26, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC G03F7/093?
- CPC G03F7/093 is the Cooperative Patent Classification code for “characterised by antistatic means, e.g. for charge depletion.”
- How many patents are filed under CPC G03F7/093 (characterised by antistatic means, e.g. for charge depletion)?
- Our database includes 89 publications tagged with this CPC code.
- Is patent activity under CPC G03F7/093 growing?
- Publication counts under this code: 7 in 2024 vs 10 in 2025 (latest complete years).