Polishing compositions and methods of manufacturing semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-10435587-B2
Application number	US-201615214847-A
Country	US
Kind code	B2
Filing date	Jul 20, 2016
Priority date	Jul 20, 2015
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.

First claim

What is claimed is:

1. A polishing composition, comprising:
abrasive ceria particles;
one or more of 1-2-hydroxyethyl-2-pyrrolidone, 4-hydroxy-2-pyrrolidone, hydroxymethyl pyrrolidone, hydroxyethyl pyrrolidone, or N-hydroxymethyl-2-pyrrolidone;
a dispersing agent;
a first dishing inhibitor including a polyacrylic acid; and
a second dishing inhibitor including a non-ionic polymer,
wherein a BET specific surface area before milling of the abrasive ceria particles is in a range from about 3 m 2 /g to about 8 m 2 /g, and a BET specific surface area after milling of the abrasive ceria particle is about 10 m 2 /g to less than 30 m 2 /g, and
wherein the composition has an etch selectivity for a silicon oxide layer relative to a silicon nitride layer such that the composition preferentially removes the silicon oxide layer.

2. The polishing composition as claimed in claim 1 , wherein the BET specific surface area after milling of the abrasive ceria particles is about 20 m 2 /g to 25 m 2 .

3. The polishing composition as claimed in claim 1 , wherein 1-2-hydroxyethyl-2-pyrrolidone is included in the composition.

4. The polishing composition as claimed in claim 1 , wherein the dispersing agent includes one or more of an anionic polymer neutralized by a compound including a hydroxyl group or an anionic polymer.

5. The polishing composition as claimed in claim 4 , wherein the dispersing agent includes one or more of a polyacrylic acid, a salt of the polyacrylic acid, a polymethacrylic acid, a salt of the polymethacrylic acid, a polyacrylic-maleic acid copolymer, or a salt of the polyacrylic-maleic acid copolymer.

6. The polishing composition as claimed in claim 4 , wherein the anionic polymer has a weight average molecular weight in a range from about 10,000 to about 100,000.

7. The polishing composition as claimed in claim 1 , wherein the first dishing inhibitor includes a polyacrylic acid having a weight average molecular weight in a range from about 500 to about 10,000.

8. The polishing composition as claimed in claim 1 , wherein the second dishing inhibitor includes one or more of a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone.

9. The polishing composition as claimed in claim 8 , wherein the second dishing inhibitor includes one or more of a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone that has a weight average molecular weight in a range from about 500 to about 10,000.

10. The polishing composition as claimed in claim 1 , wherein the composition includes:
about 0.1 weight percent to about 10 weight percent of the abrasive ceria particles;
about 0.01 weight percent to about 5 weight percent of the one or more of 1-2-hydroxyethyl-2-pyrrolidone, 4-hydroxy-2-pyrrolidone, hydroxymethyl pyrrolidone, hydroxyethyl pyrrolidone, or N-hydroxymethyl-2-pyrrolidone;
about 0.01 weight percent to about 10 weight percent of the dispersing agent;
about 0.05 weight percent to about 5 weight percent of the first dishing inhibitor;
about 0.0005 weight percent to about 0.1 weight percent of the second dishing inhibitor; and
a remainder of a diluent, based on a total weight of the polishing composition.

11. A composition, comprising:
a diluent;
abrasive ceria particles;
one or more of 1-2-hydroxyethyl-2-pyrrolidone, 4-hydroxy-2-pyrrolidone, hydroxymethyl pyrrolidone, hydroxyethyl pyrrolidone, or N-hydroxymethyl-2-pyrrolidone;
a first polyacrylic acid having a weight average molecular weight in a range from about 500 to about 10,000;
one or more of:
a second polyacrylic acid having a weight average molecular weight in a range from about 10,000 to about 100,000, an ammonium salt of the second polyacrylic acid, a polymethacrylic acid having a weight average molecular weight in a range from about 10,000 to about 100,000, an ammonium salt of the polymethacrylic acid, a polyacrylic-maleic acid copolymer having a weight average molecular weight in a range from about 10,000 to about 100,000, a salt of the polyacrylic-maleic acid copolymer, a carboxylic acid, a salt of a carboxylic acid, a sulfonic ester, a salt of a sulfonic ester, a sulfonic acid, a salt of a sulfonic acid, a phosphoric ester, or a salt of a phosphoric ester, and one or more of:
a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone,

wherein a BET specific surface area before milling of the abrasive ceria particles is in a range from about 3 m 2 /g to about 8 m 2 /g, and a BET specific surface area after milling of the abrasive ceria particle is about 10 m 2 /g to less than 30 m 2 /g, and
wherein the composition has an etch selectivity for a silicon oxide layer relative to a silicon nitride layer such that the composition preferentially removes the silicon oxide layer.

12. The composition as claimed in claim 11 , wherein the composition has a pH that is in a range of about 6 to 7.

13. The composition as claimed in claim 11 , wherein the pH of the composition is basic or neutral.

14. A polishing composition, comprising:
abrasive ceria particles;
1-2-hydroxyethyl-2-pyrrolidone;
a dispersing agent;
a first dishing inhibitor including polyacrylic acid; and
a second dishing inhibitor including a non-ionic polymer,
wherein a BET specific surface area before milling of the abrasive ceria particles is in a range from about 3 m 2 /g to about 8 m 2 /g, and a BET specific surface area after milling of the abrasive ceria particle is about 10 m 2 /g to less than 30 m 2 /g, and
wherein the composition has an etch selectivity for a silicon oxide layer relative to a silicon nitride layer such that the composition preferentially removes the silicon oxide layer.

Assignees

• Samsung Electronics Co Ltd
• K C Tech Co Ltd

Inventors

• Park Seung-Ho
• Jung Ki-Hwa
• Kim Sang-Kyun
• Hwang Jun-Ha
• Kwon Chang-Gil
• Baek Seung-Yeop
• Lee Jae-Woo
• Lee Ji-Sung
• Choi Jae-Kwang
• Hwang Jin-Myung

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title