Substrate processing device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10403524-B2
Application number	US-201815989887-A
Country	US
Kind code	B2
Filing date	May 25, 2018
Priority date	Sep 16, 2016
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
etching a metal film provided on a substrate using a first liquid in which an acid liquid containing phosphoric acid and water are mixed, the first liquid being stored in a first container;
supplying a second liquid containing water stored in a second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid, during the etching; and
intermittently supplying the second liquid based on a supply amount which is preset so as to increase over time.

2. The method according to claim 1 , wherein the metal film contains tungsten.

3. The method according to claim 2 , the second liquid contains at least one of nitric acid or acetic acid.

4. The method according to claim 1 , the second liquid contains at least one of nitric acid or acetic acid.

5. A method of manufacturing a semiconductor device, comprising:
etching a metal film provided on a substrate using a first liquid in which an acid liquid containing phosphoric acid and water are mixed, the first liquid being stored in a first container;
supplying a second liquid containing water stored in a second container to the first container such that a water concentration of the first liquid increase over time corresponding to change in a concentration of the phosphoric acid in the first liquid, during the etching; and
intermittently supplying the second liquid at intervals which are preset so as to be shortened over time.

6. The method according to claim 5 , wherein the metal film contains tungsten.

7. The method according to claim 6 , the second liquid contains at least one of nitric acid or acetic acid.

8. The method according to claim 5 , the second liquid contains at least one of nitric acid or acetic acid.

Assignees

• Toshiba Memory Corp

Inventors

• Muraki Shinsuke
• Yamada Hiroaki
• Akeboshi Yuya
• Sato Katsuhiro

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0422

  for wet etching · CPC title

• H10P72/0416

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title