Substrate cleaning liquid and substrate cleaning method

Patent metadata

Field	Value
Publication number	US-9528079-B2
Application number	US-201314651355-A
Country	US
Kind code	B2
Filing date	Oct 9, 2013
Priority date	Dec 13, 2012
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

First claim

The invention claimed is:

1. A substrate cleaning liquid that is a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, wherein the cleaning liquid comprises phosphoric acid, electrolytic sulfuric acid including persulfuric acid produced by electrolysis of sulfuric acid, and water, and is warmed to 165° C. or higher and lower than a boiling point for use in the cleaning,
wherein a concentration of the persulfuric acid produced by electrolysis in an entire cleaning liquid is 1.0 to 8.0 g/L.

2. The substrate cleaning liquid according to claim 1 , wherein a concentration of the phosphoric acid is 15 to 40% by mass and a concentration of the sulfuric acid is 30 to 85% by mass in the entire cleaning liquid.

3. The substrate cleaning liquid according to claim 1 , wherein a ratio of a concentration (% by mass) of the phosphoric acid to a concentration (% by mass) of the sulfuric acid ranges from 1:1.5 to 1:4 in the entire cleaning liquid.

4. The substrate cleaning liquid according to claim 1 , having a water content of 15 to 25% by mass.

5. The substrate cleaning liquid according to claim 1 , for use in sheet-type cleaning of the substrate.

6. A substrate cleaning method that is a method for cleaning a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, the method comprising bringing the substrate into contact with a substrate cleaning liquid according to claim 1 to selectively etch the silicon nitride on the substrate.

7. The substrate cleaning method according to claim 6 , wherein the silicon nitride is stacked on the silicon oxide on the substrate.

8. The substrate cleaning method according to claim 6 , wherein the substrate has a pattern line width of 32 nm or less.

9. The substrate cleaning method according to claim 6 , comprising cleaning the substrate by the cleaning liquid in a sheet-type manner.

10. The substrate cleaning method according to claim 6 , comprising recovering a cleaning liquid used for cleaning, subjecting the cleaning liquid to electrolysis to increase a concentration of persulfuric acid, and thereafter further subjecting the resulting cleaning liquid to the cleaning as a cleaning liquid.

Assignees

• Kurita Water Ind Ltd

Inventors

• Ida Junichi
• Nagai Tatsuo

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• C11D11/0047 Primary

  Chemistry & Metallurgy · mapped topic

• H01L21/31111

  Electricity · mapped topic

• C11D7/08 Primary

  Acids · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title