Substrate processing method

Patent metadata

Field	Value
Publication number	US-9543162-B2
Application number	US-201514824427-A
Country	US
Kind code	B2
Filing date	Aug 12, 2015
Priority date	Aug 14, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A substrate processing method includes a phosphoric acid processing step of supplying a phosphoric acid aqueous solution, which contains silicon and has a silicon concentration lower than a saturation concentration, to a front surface of a substrate, a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step, and a rinse replacing step of supplying a rinse liquid having a temperature lower than that of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step to the front surface of the substrate covered with the phosphoric acid aqueous solution at least partially, after the liquid volume reducing step.

First claim

What is claimed is:

1. A substrate processing method comprising:
a phosphoric acid processing step that includes a step of supplying a phosphoric acid aqueous solution, which contains silicon, to a front surface of a substrate and processes the front surface of the substrate while forming a liquid film of the phosphoric acid aqueous solution having a silicon concentration lower than a saturation concentration of silicon;
a liquid volume reducing step of reducing a volume of the phosphoric acid aqueous solution on the substrate, after the phosphoric acid processing step;
a rinse step of supplying the front surface of the substrate with a rinse liquid having a temperature lower than that of the liquid film of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step, and replacing the phosphoric acid aqueous solution on the front surface of the substrate with the rinse liquid, after the liquid volume reducing step;
a first concentration maintaining step of maintaining a concentration of silicon contained in the liquid film of the phosphoric acid aqueous solution on the substrate at a concentration lower than the saturation concentration, until the liquid volume reducing step ends; and
a second concentration maintaining step of maintaining a concentration of silicon contained in a liquid on the substrate at a concentration lower than the saturation concentration, until supplying of the rinse liquid ends in the rinse step.

2. The substrate processing method according to claim 1 , wherein a temperature of the rinse liquid supplied to the front surface of the substrate in the rinse step is lower than that of the liquid film of the phosphoric acid aqueous solution supplied to the front surface of the substrate in the phosphoric acid processing step, and higher than a room temperature.

3. The substrate processing method according to claim 1 , wherein
the phosphoric acid processing step includes a step of forming a liquid film of the phosphoric acid aqueous solution covering the entire front surface of the substrate by supplying the phosphoric acid aqueous solution to the substrate, and
the liquid volume reducing step is a step of reducing the volume of the phosphoric acid aqueous solution on the substrate while maintaining a state in which the entire front surface of the substrate is covered with the liquid film of the phosphoric acid aqueous solution.

4. The substrate processing method according to claim 1 , further comprising a pre-wetting step of supplying a pre-wetting liquid to the front surface of the substrate before the phosphoric acid processing step, and
the phosphoric acid processing step includes a step of supplying the phosphoric acid aqueous solution to the front surface of the substrate covered with the pre-wetting liquid at least partially.

5. The substrate processing method according to claim 4 , wherein a temperature of the pre-wetting liquid supplied to the substrate in the pre-wetting step is higher than a room temperature.

6. The substrate processing method according to claim 1 , wherein
the phosphoric acid processing step includes a step of supplying the front surface of the substrate with the phosphoric acid aqueous solution having a temperature close to a boiling point of the phosphoric acid aqueous solution, and
a boiling point of the rinse liquid supplied to the substrate in the rinse step is lower than the boiling point of the phosphoric acid aqueous solution supplied to the substrate in the phosphoric acid processing step.

7. The substrate processing method according to claim 1 , further comprising a heating step of heating the phosphoric acid aqueous solution on the substrate, in parallel to the phosphoric acid processing step.

Assignees

• Screen Holdings Co Ltd

Inventors

• Hinode Taiki
• Ota Takashi
• Saito Kazuhide

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• C01B25/461

  the phosphoric acid present in the medium obtained after reaction being first extracted from the liquid phase formed or separated then re-extracted as free acid by using water or as a phosphate by using a basic compound (selective extraction of impurities contained in acid C01B25/237) · CPC title

• H01L21/67028

  Electricity · mapped topic

• H01L21/31111 Primary

  Electricity · mapped topic