Process gas management for an inductively-coupled plasma deposition reactor
US-10023960-B2 · Jul 17, 2018 · US
US10403474B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10403474-B2 |
| Application number | US-201615207035-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2016 |
| Priority date | Jul 11, 2016 |
| Publication date | Sep 3, 2019 |
| Grant date | Sep 3, 2019 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.
Opening claim text (preview).
What is claimed is: 1. A substrate processing system comprising: a processing chamber; a showerhead including a faceplate, a stem portion and a cylindrical base portion; a collar connecting the showerhead to a top surface of the processing chamber, wherein the collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction; and a conical surface arranged adjacent to the cylindrical base portion and around the stem portion of the showerhead, wherein a top surface of the processing chamber includes an inverted conical surface arranged adjacent to the top surface and sidewalls of the processing chamber, wherein the inverted conical surface extends radially outward from (i) the top surface adjacent to the collar to (ii) the sidewalls, and wherein the conical surface and the inverted conical surface define an angled gas channel in a first gap between the conical surface and the inverted conical surface and extending radially outward from the collar to an outer edge of the cylindrical base portion and to the sidewalls of the processing chamber to define a second gap between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber. 2. The substrate processing system of claim 1 , wherein the gas channel defines a flow path that has a constant width and that is parallel to a direction of the secondary purge gas flowing from the plurality of gas slits. 3. The substrate processing system of claim 1 , wherein the conical surface is hollow and is attached to at least one of the stem portion and the base portion of the showerhead. 4. The substrate processing system of claim 1 , wherein the conical surface is solid and is attached to at least one of the stem portion and the base portion of the showerhead. 5. The substrate processing system of claim 1 , wherein the conical surface is integrated with at least one of the stem portion and the base portion of the showerhead. 6. The substrate processing system of claim 1 , wherein the inverted conical surface is hollow and is attached to at least one of the top surface and the sidewalls of the processing chamber. 7. The substrate processing system of claim 1 , wherein the inverted conical surface is solid and is attached to at least one of the top surface and the sidewalls of the processing chamber. 8. The substrate processing system of claim 1 , wherein the inverted conical surface is integrated with at least one of the top surface and the sidewalls of the processing chamber. 9. The substrate processing system of claim 1 , wherein the conical surface includes a central opening for receiving the stem portion. 10. The substrate processing system of claim 1 , wherein the plurality of gas slits are spaced in radial and axial directions along the collar.
the radio frequency energy being capacitively coupled to the plasma · CPC title
Inert gas curtains · CPC title
Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title
Shower nozzles · CPC title
characterized by the apparatus · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.