Process gas management for an inductively-coupled plasma deposition reactor

Patent metadata

Field	Value
Publication number	US-10023960-B2
Application number	US-201715466149-A
Country	US
Kind code	B2
Filing date	Mar 22, 2017
Priority date	Sep 12, 2012
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

First claim

The invention claimed is:

1. A method of forming a film on a semiconductor substrate including a plasma generation region and a reaction region, the plasma generation region located upstream from the reaction region, the method comprising:
supporting the semiconductor substrate on a susceptor so that the semiconductor substrate is exposed to the reaction region within the processing tool;
in a first phase:
introducing precursor gas to the reaction region without exposing the precursor gas to plasma conditions, and
adsorbing reactive precursor intermediates to an exposed surface of the semiconductor substrate;

in a second phase:
supplying a plasma gas to the plasma generation region,
generating radicals with the plasma gas in the plasma generation region with an ICP source,
delivering radicals to the reaction region, and
reacting radicals with precursor intermediates adsorbed to the exposed surface to form the film.

2. The method of claim 1 , where introducing precursor gas to the reaction region includes:
supplying the precursor gas to a precursor gas distributor from a precursor gas supply line included in a centrally-positioned precursor gas distributor support;
directing the precursor gas within the precursor gas distributor to flow radially outward from the centrally-positioned precursor gas distributor support toward an edge of the precursor gas distributor; and
ejecting the precursor gas from the precursor gas distributor from a plurality of precursor gas-feed inlets positioned between the centrally-positioned precursor gas distributor support and the edge of the precursor gas distributor so that the precursor gas is directed toward the surface of the semiconductor substrate exposed to the reaction region.

3. The method of claim 2 , where generating radicals comprises:
generating a plasma in the plasma generation region; and
generating a radial distribution of radicals with the plasma by varying a radial density of plasma in the plasma generation region.

4. A method of forming a film on a semiconductor substrate in an inductively-coupled plasma (ICP) processing tool including a plasma generation region and a reaction region, the plasma generation region located upstream from the reaction region, the method comprising:
supporting the semiconductor substrate on a susceptor so that the semiconductor substrate is exposed to the reaction region within the ICP processing tool;
in a first phase:
introducing precursor gas to the reaction region without exposing the precursor gas to plasma conditions, and
adsorbing reactive precursor intermediates to an exposed surface of the semiconductor substrate;

in a second phase:
supplying a plasma gas to the plasma generation region,
generating radicals with the plasma gas in the plasma generation region with an ICP source,
delivering radicals to the reaction region, and
reacting radicals with precursor intermediates adsorbed to the exposed surface to form the film.

5. The method of claim 4 , where introducing precursor gas to the reaction region includes:
supplying the precursor gas to a precursor gas distributor from a precursor gas supply line included in a centrally-positioned precursor gas distributor support;
directing the precursor gas within the precursor gas distributor to flow radially outward from the centrally-positioned precursor gas distributor support toward an edge of the precursor gas distributor; and
ejecting the precursor gas from the precursor gas distributor from a plurality of precursor gas-feed inlets positioned between the centrally-positioned precursor gas distributor support and the edge of the precursor gas distributor so that the precursor gas is directed toward the surface of the semiconductor substrate exposed to the reaction region.

6. The method of claim 4 , where generating radicals comprises:
generating a plasma in the plasma generation region; and
generating a radial distribution of radicals with the plasma by varying a radial density of plasma in the plasma generation region.

7. The method of claim 4 , further comprising, in a third phase:
introducing reactant gas to the reaction region;
adsorbing reactive reactant intermediates to the exposed surface of the semiconductor substrate; and
reacting radicals with precursor intermediates and reactant intermediates adsorbed to the exposed surface to form the film.

Assignees

• Asm Ip Holding Bv
• Asm Ip Holdings B V

Inventors

• Alokozai Fred
• Milligan Robert Brennan

Classifications

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C23C16/507

  using external electrodes, e.g. in tunnel type reactors · CPC title

• C23C16/45563

  Gas nozzles · CPC title