Method for controlling resistivity and N-type silicon single crystal

Patent metadata

Field	Value
Publication number	US-10400353-B2
Application number	US-201515503949-A
Country	US
Kind code	B2
Filing date	Aug 14, 2015
Priority date	Aug 29, 2014
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

A method controls a resistivity of a grown silicon single crystal by using a dopant when the silicon single crystal is grown by CZ method, including the steps of initially doping with a primary dopant such that the silicon single crystal has a predetermined conductive type and additionally doping with a secondary dopant having a conductive type opposite to that of the primary dopant continuously or intermittently, according to a solidification rate expressed by (crystalized weight)/(initial weight of silicon raw material) while growing the silicon single crystal, wherein in the additional doping step, the additional doping with the secondary dopant is carried out when the solidification rate is a predetermined value α or more, while the crystal is not doped with the secondary dopant until the solidification rate reaches the predetermined value α.

First claim

The invention claimed is:

1. A method for controlling a resistivity of a grown silicon single crystal by using a dopant when the silicon single crystal is grown by CZ method, the method comprising the steps of:
initially doping with phosphorus such that the silicon single crystal has n-type conductivity; and
additionally doping with boron according to a solidification rate expressed by (crystalized weight)/(initial weight of silicon raw material) while growing the silicon single crystal,
wherein:
in the additional doping step, the additional doping is carried out when the solidification rate is a predetermined value α or more, while the crystal is not doped with the boron until the solidification rate reaches the predetermined value α, and
the predetermined value α satisfies k/4≤α≤2k, wherein:
k is a segregation coefficient of phosphorus, and
when 2k>1, k/4≤α≤1.

2. The method for controlling a resistivity according to claim 1 , further comprising a step of repeatedly growing a second or later silicon single crystal with an additional charge of a raw material after growing a first silicon single crystal, wherein the step of repeatedly growing a second or later silicon single crystal includes the stages of:
adding phosphorus in consideration of an amount of the boron that has been added in previous growth of the silicon single crystal; and
additionally doping with boron according to the solidification rate after the solidification rate reaches the predetermined value α or more such that the crystal is not doped with the boron until the solidification rate reaches the predetermined value α, while growing the silicon single crystal.

3. The method for controlling a resistivity according to claim 2 , wherein the predetermined value α is a first solidification rate or more and a second solidification rate or less, where the first solidification rate is a rate at which a product can be obtained even if dislocation occurs and slip back is caused in the crystal having a straight body length corresponding to the first solidification rate, and a second solidification rate is a rate at which a resistivity of the silicon single crystal satisfies a predetermined standard only by a dopant added before growing the silicon single crystal.

4. The method for controlling a resistivity according to claim 2 , wherein the additional doping is performed by inserting or introducing a silicon thin rod containing the boron or a doping agent obtained by pulverizing a silicon crystal containing the boron into a silicon melt in a region between the grown silicon crystal and a crucible wall.

5. The method for controlling a resistivity according to claim 1 , wherein the predetermined value α is a first solidification rate or more and a second solidification rate or less, where the first solidification rate is a rate at which a product can be obtained even if dislocation occurs and slip back is caused in the crystal having a straight body length corresponding to the first solidification rate, and a second solidification rate is a rate at which a resistivity of the silicon single crystal satisfies a predetermined standard only by a dopant added before growing the silicon single crystal.

6. The method for controlling a resistivity according to claim 1 , wherein the additional doping is performed by inserting or introducing a silicon thin rod containing the boron or a doping agent obtained by pulverizing a silicon crystal containing the boron into a silicon melt in a region between the grown silicon crystal and a crucible wall.

Assignees

• Shinetsu Handotai Kk

Inventors

• Hoshi Ryoji
• Kamada Hiroyuki
• Takano Kiyotaka

Classifications

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title

• H01L29/7393

  Electricity · mapped topic

• H01L29/167

  Electricity · mapped topic